Semiconductor Quantum Dots and Quantum Dot Arrays and Applications of Multiple Exciton Generation to Third-Generation Photovoltaic Solar Cells

2010 ◽  
Vol 110 (11) ◽  
pp. 6873-6890 ◽  
Author(s):  
A. J. Nozik ◽  
M. C. Beard ◽  
J. M. Luther ◽  
M. Law ◽  
R. J. Ellingson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Semiconductor Quantum Dots ◽  
Third Generation ◽  
Multiple Exciton Generation ◽  
Photovoltaic Solar Cells

Quantum dot–polymer conjugates for stable luminescent displays

Nanoscale ◽  
2018 ◽  
Vol 10 (28) ◽  
pp. 13368-13374 ◽  
Author(s):  
Sushant Ghimire ◽  
Anjaly Sivadas ◽  
Ken-ichi Yuyama ◽  
Yuta Takano ◽  
Raju Francis ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Semiconductor Quantum Dots ◽  
Broad Absorption ◽  
Polymer Conjugates ◽  
Absorption Of Light

The broad absorption of light in the UV-Vis-NIR region and the size-based tunable photoluminescence color of semiconductor quantum dots make these tiny crystals one of the most attractive antennae in solar cells and phosphors in electrooptical devices.

Silicon quantum dots embedded in amorphous SiC matrix for third-generation solar cells: Microstructure control by RF discharge power

2015 ◽  
Vol 08 (05) ◽  
pp. 1550054 ◽  
Author(s):  
Qijin Cheng ◽  
Igor Levchenko ◽  
Denyuan Song ◽  
Shuyan Xu ◽  
Kostya Ken Ostrikov
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Inductively Coupled Plasma ◽  
Low Frequency ◽  
Rf Discharge ◽  
Third Generation ◽  
Silicon Quantum Dots ◽  
Inductively Coupled ◽  
Carbide Matrix ◽  
Photovoltaic Solar Cells

A low-frequency (460 kHz), low-pressure, thermally non-equilibrium, high-density inductively coupled plasma (ICP) has been used to synthesize a novel, advanced photovoltaic material suitable for fabrication of third-generation solar cells. Silicon quantum dots (SQDs) embedded in an amorphous silicon carbide matrix were prepared at a very low substrate temperature of approximately 200°C without any hydrogen dilution. The effect of the radio-frequency (RF) power of the plasma discharge on the morphology and structure of the embedded quantum dots was studied. A brief discussion on the possible mechanisms of the quantum dot formation in the ICP is presented. This study is relevant to third-generation photovoltaic solar cells.

Solar Cells Based on Quantum Dots: Multiple Exciton Generation and Intermediate Bands

MRS Bulletin ◽  
2007 ◽  
Vol 32 (3) ◽  
pp. 236-241 ◽  
Author(s):  
Antonio Luque ◽  
Antonio Martí ◽  
Arthur J. Nozik
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Single Photon ◽  
Quantum Yields ◽  
Bandgap Energy ◽  
Hot Electron ◽  
Electron Hole ◽  
Multiple Exciton Generation ◽  
Intermediate Band

AbstractSemiconductor quantum dots may be used in so-called third-generation solar cells that have the potential to greatly increase the photon conversion efficiency via two effects: (1) the production of multiple excitons from a single photon of sufficient energy and (2) the formation of intermediate bands in the bandgap that use sub-bandgap photons to form separable electron–hole pairs. This is possible because quantization of energy levels in quantum dots produces the following effects: enhanced Auger processes and Coulomb coupling between charge carriers; elimination of the requirement to conserve crystal momentum; slowed hot electron–hole pair (exciton) cooling; multiple exciton generation; and formation of minibands (delocalized electronic states) in quantum dot arrays. For exciton multiplication, very high quantum yields of 300–700% for exciton formation in PbSe, PbS, PbTe, and CdSe quantum dots have been reported at photon energies about 4–8 times the HOMO–LUMO transition energy (quantum dot bandgap), respectively, indicating the formation of 3–7 excitons/photon, depending upon the photon energy. For intermediate-band solar cells, quantum dots are used to create the intermediate bands from the con fined electron states in the conduction band. By means of the intermediate band, it is possible to absorb below-bandgap energy photons. This is predicted to produce solar cells with enhanced photocurrent without voltage degradation.

scholarly journals Flexible and efficient perovskite quantum dot solar cells via hybrid interfacial architecture

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Long Hu ◽  
Qian Zhao ◽  
Shujuan Huang ◽  
Jianghui Zheng ◽  
Xinwei Guan ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Mechanical Stability ◽  
Mechanical Adhesion ◽  
Perovskite Quantum Dots ◽  
Efficient Charge ◽  
Photovoltaic Technologies

AbstractAll-inorganic CsPbI3 perovskite quantum dots have received substantial research interest for photovoltaic applications because of higher efficiency compared to solar cells using other quantum dots materials and the various exciting properties that perovskites have to offer. These quantum dot devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. We demonstrate higher mechanical endurance of quantum dot films compared to bulk thin film and highlight the importance of further research on high-performance and flexible optoelectronic devices using nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial architecture consisting of CsPbI3 quantum dot/PCBM heterojunction, enabling an energy cascade for efficient charge transfer and mechanical adhesion. The champion CsPbI3 quantum dot solar cell has an efficiency of 15.1% (stabilized power output of 14.61%), which is among the highest report to date. Building on this strategy, we further demonstrate a highest efficiency of 12.3% in flexible quantum dot photovoltaics.

Anisotropic Nanostructure ZnO Photoelectrodes for CdS/CdSe Quantum Dot Sensitized Solar Cells

2013 ◽  
Vol 873 ◽  
pp. 556-561
Author(s):  
Jian Jun Tian
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Chemical Bath Deposition ◽  
Cdse Quantum Dots ◽  
Silar Method ◽  
Nanorods Array ◽  
Cdse Quantum Dot ◽  
Cbd Method ◽  
Sensitized Solar Cells

CdS/CdSe quantum dots co-sensitized solar cells (QDSCs) were prepared by combining the successive ion layer absorption and reaction (SILAR) method and chemical bath deposition (CBD) method for the fabrication of CdS and CdSe quantum dots, respectively. In this work, we designed anisotropic nanostructure ZnO photoelectrodes, such as nanorods/nanosheets and nanorods array, for CdS/CdSe quantum dots co-sensitized solar cells. Our study revealed that the performance of QDSCs could be improved by modifying surface of ZnO to increase the loading of quantum dots and reduce the charge recombination.

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