Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots

2010 ◽  
Vol 114 (11) ◽  
pp. 4841-4845 ◽  
Author(s):  
Hui-Xiong Deng ◽  
Shu-Shen Li ◽  
Jingbo Li
Keyword(s):  
Electronic Properties ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Confinement Effects ◽  
Quantum Confinement Effects

Separation of strain and quantum-confinement effects in the optical spectra of quantum wires

2000 ◽  
Vol 61 (7) ◽  
pp. 4488-4491 ◽  
Author(s):  
E. Martinet ◽  
M.-A. Dupertuis ◽  
F. Reinhardt ◽  
G. Biasiol ◽  
E. Kapon ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Quantum Wires ◽  
Optical Spectra ◽  
Confinement Effects ◽  
Quantum Confinement Effects

Size dependence of lateral quantum-confinement effects of the optical response inIn0.53Ga0.47As/InP quantum wires

1995 ◽  
Vol 52 (15) ◽  
pp. 11073-11088 ◽  
Author(s):  
M. Notomi ◽  
S. Nojima ◽  
M. Okamoto ◽  
H. Iwamura ◽  
T. Tamamura ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Size Dependence ◽  
Quantum Wires ◽  
Optical Response ◽  
Confinement Effects ◽  
Quantum Confinement Effects

Opto-Electronic Properties of Ge and Si Related Nanostructures on Ultrathin Si Oxide Covered Si Surfaces

2008 ◽  
Vol 1145 ◽  
Author(s):  
Masakazu Ichikawa ◽  
Yoshiaki Nakamura ◽  
Alexander Shklyaev ◽  
Norohito Fujinoki
Keyword(s):  
Electronic Properties ◽  
Energy Region ◽  
Quantum Confinement ◽  
High Density ◽  
Confinement Effects ◽  
Si Substrates ◽  
Quantum Confinement Effects ◽  
Intense Luminescence ◽  
Si Films

AbstractWe present a method to form semiconductor nanodots on Si substrates by using ultrathin Si oxide technology and the results on their opto-electronic properties. We can form ultra-small semiconductor nanodots with the size of ˜5nm and ultra-high density of ˜1012 cm−2 on Si surfaces covered with ultrathin SiO2 films of ˜0.3nm thickness. We focus on the Ge and GeSn nanodots on Si substrates and those embedded in Si films. These structures exhibit quantum confinement effects and intense luminescence in the energy region of about 0.8 eV.

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