Thin Film Rheology and Tribology of Confined Polymer Melts:  Contrasts with Bulk Properties

1997 ◽  
Vol 30 (8) ◽  
pp. 2482-2494 ◽  
Author(s):  
Gustavo Luengo ◽  
Franz-Josef Schmitt ◽  
Robert Hill ◽  
Jacob Israelachvili
1995 ◽  
Vol 28 (5) ◽  
pp. 1511-1515 ◽  
Author(s):  
A. Subbotin ◽  
A. Semenov ◽  
E. Manias ◽  
G. Hadziioannou ◽  
G. Ten Brinke

Science ◽  
1992 ◽  
Vol 258 (5086) ◽  
pp. 1339-1342 ◽  
Author(s):  
H.-W. Hu ◽  
S. Granick

2014 ◽  
Vol 47 (18) ◽  
pp. 6462-6472 ◽  
Author(s):  
Daniel M. Sussman ◽  
Wei-Shao Tung ◽  
Karen I. Winey ◽  
Kenneth S. Schweizer ◽  
Robert A. Riggleman
Keyword(s):  

2005 ◽  
Vol 107 (3) ◽  
pp. 443-450 ◽  
Author(s):  
A. Sikorski

Langmuir ◽  
1994 ◽  
Vol 10 (10) ◽  
pp. 3874-3879 ◽  
Author(s):  
John Peanasky ◽  
Lenore L. Cai ◽  
Steve Granick ◽  
Carl R. Kessel

2011 ◽  
Vol 44 (14) ◽  
pp. 5758-5763 ◽  
Author(s):  
X. Chelsea Chen ◽  
Hengxi Yang ◽  
Peter F. Green
Keyword(s):  

1986 ◽  
Vol 70 ◽  
Author(s):  
K. Rosan ◽  
G. Brunst

ABSTRACTHigh photosensitivity and fast photoresponse have proved a-Si:H to be a suitable thin-film photoconductor for large-size linear image sensors. Besides the a-Si:H bulk properties, the a-Si:H/electrode interfaces are of major influence on the sensor performance. In view of this performance, the readout circuit has to be designed carefully with respect to the desired dynamic range. Care has to be taken to avoid electrostatic hazards when mounting the sensor, as the breakdown voltage of a-Si:H sensor elements was found to be about 60 volts.


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