Characterisation of the electronic structure of some stable nitroxyl radicals using variable energy photoelectron spectroscopy

2014 ◽  
Vol 16 (22) ◽  
pp. 10734-10742 ◽  
Author(s):  
Branka Kovač ◽  
Ivan Ljubić ◽  
Antti Kivimäki ◽  
Marcello Coreno ◽  
Igor Novak

Core and valence ionizations of three stable nitroxyl radicals studied using synchrotron radiation reveal strong intramolecular interactions in amide derivatives.

2015 ◽  
Vol 17 (16) ◽  
pp. 10656-10667 ◽  
Author(s):  
Branka Kovač ◽  
Ivan Ljubić ◽  
Antti Kivimäki ◽  
Marcello Coreno ◽  
Igor Novak

UV and X-ray photoelectron spectra of three N-heterocyclic carbenes under synchrotron radiation reveal details of their electronic structure and are used as a benchmark to test computational methods for treating core ionizations in systems with unusual electronic structures.


2006 ◽  
Vol 110 (31) ◽  
pp. 15244-15250 ◽  
Author(s):  
Sameer Sapra ◽  
J. Nanda ◽  
Jeffrey M. Pietryga ◽  
Jennifer A. Hollingsworth ◽  
D. D. Sarma

1996 ◽  
Vol 15 (21) ◽  
pp. 4493-4500 ◽  
Author(s):  
Yong-Feng Hu ◽  
G. Michael Bancroft ◽  
Harry B. Davis ◽  
Jonathan I. Male ◽  
Roland K. Pomeroy ◽  
...  

2019 ◽  
Vol 61 (12) ◽  
pp. 2294
Author(s):  
С.Н. Тимошнев ◽  
А.М. Мизеров ◽  
Г.В. Бенеманская ◽  
С.А. Кукушкин ◽  
А.Д. Буравлев

The results of experimental studies of the electronic and photoemission properties of an epitaxial GaN layer grown on a SiC/Si(111) substrate by plasma assisted molecular beam epitaxy are presented. The electronic structure of the GaN surface and ultrathin Li/GaN interface was first studied in situ under ultrahigh vacuum conditions under different Li coverages. The experiments were performed using photoelectron spectroscopy with synchrotron radiation in the photon energy range of 75–850 eV. The photoemission spectra in the region of the valence band and surface states and the photoemission spectra from the N 1s, Ga 3d, Li 2s core levels were studied for different submonolayer Li coverages. It is established that Li adsorption causes significant changes in the general form of the spectra induced by charge transfer between the Li layer and the lower N and Ga layers. It is established that the GaN surface has predominantly N-polarity. The semiconductor character of the Li / GaN interface is shown.


2005 ◽  
Vol 249 (1-2) ◽  
pp. 229-253 ◽  
Author(s):  
Edward I. Solomon ◽  
Lipika Basumallick ◽  
Peng Chen ◽  
Pierre Kennepohl

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