Enhanced room temperature NO2 response of NiO–SnO2 nanocomposites induced by interface bonds at the p–n heterojunction

2016 ◽  
Vol 18 (7) ◽  
pp. 5386-5396 ◽  
Author(s):  
Jian Zhang ◽  
Dawen Zeng ◽  
Qiang Zhu ◽  
Jinjin Wu ◽  
Qingwu Huang ◽  
...  

The sensing mechanism based on the heterojunction was proposed for the largely enhanced room temperature NO2 response of NiO–SnO2 nanocomposites.

2020 ◽  
Vol 9 (5) ◽  
pp. 10624-10634
Author(s):  
Siti Nor Aliffah Mustaffa ◽  
Nurul Assikin Ariffin ◽  
Ahmed Lateef Khalaf ◽  
Mohd. Hanif Yaacob ◽  
Nizam Tamchek ◽  
...  

Vacuum ◽  
2019 ◽  
Vol 166 ◽  
pp. 37-44 ◽  
Author(s):  
R.P. Patil ◽  
Chaitanya Hiragond ◽  
G.H. Jain ◽  
Pawan K. Khanna ◽  
V.B. Gaikwad ◽  
...  

2018 ◽  
Vol 6 (5) ◽  
pp. 2053-2066 ◽  
Author(s):  
Ahmed A. Abokifa ◽  
Kelsey Haddad ◽  
John Fortner ◽  
Cynthia S. Lo ◽  
Pratim Biswas

A useful feedback loop: insights from theoretical calculations are used for rational design of nanosensors and for elucidating surface interactions.


2014 ◽  
Vol 203 ◽  
pp. 17-24 ◽  
Author(s):  
Rajan Saini ◽  
Aman Mahajan ◽  
R.K. Bedi ◽  
D.K. Aswal ◽  
A.K. Debnath

2009 ◽  
Vol 95 (14) ◽  
pp. 142106 ◽  
Author(s):  
Shan-Wei Fan ◽  
Arvind K. Srivastava ◽  
Vinayak P. Dravid

2016 ◽  
Vol 227 ◽  
pp. 220-226 ◽  
Author(s):  
Jiabao Cui ◽  
Linqi Shi ◽  
Tengfeng Xie ◽  
Dejun Wang ◽  
Yanhong Lin

2016 ◽  
Vol 65 (9) ◽  
pp. 097302
Author(s):  
Xing Lan-Jun ◽  
Chang Yong-Qin ◽  
Shao Chang-Jing ◽  
Wang Lin ◽  
Long Yi

Author(s):  
Nu Si A Eom ◽  
Hong-Baek Cho ◽  
Yoseb Song ◽  
Woojin Lee ◽  
Tohru Sekino ◽  
...  

In this study, a graphene-doped porous silicon (G-doped/p-Si) substrate for low ppm H2 gas detection by an inexpensive synthesis route was proposed as a potential noble graphene-based gas sensor material and to understand the sensing mechanism. The G-doped/p-Si gas sensor was synthesized by a simple capillary force-assisted solution dropping method on p-Si substrates, whose porosity was generated through an electrochemical etching process. G-doped/p-Si was fabricated with various graphene concentrations and exploited as a H2 sensor operated at room temperature. The sensing mechanism of the sensor with/without graphene decoration on p-Si was proposed to elucidate the synergetic gas sensing effect generated from the interface between the graphene and p-type silicon.


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