Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure
2017 ◽
Vol 5
(9)
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pp. 2259-2267
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Keyword(s):
In this study, a simple TiN/SiO2/p-Si tunneling junction structure was fabricated via thermal oxidation growth on a Si substrate annealed at 600 °C.
2016 ◽
Vol 30
(14)
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pp. 1650141
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Keyword(s):
Keyword(s):
2020 ◽
Vol 67
(12)
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pp. 5484-5489
Keyword(s):
2013 ◽
Vol 34
(10)
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pp. 1265-1267
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2010 ◽
Vol 31
(9)
◽
pp. 1020-1022
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2018 ◽
Vol 65
(7)
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pp. 2812-2819
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2012 ◽
Vol 33
(10)
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pp. 1405-1407
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Keyword(s):