Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure

2017 ◽  
Vol 5 (9) ◽  
pp. 2259-2267 ◽  
Author(s):  
Xiaobing Yan ◽  
Zhenyu Zhou ◽  
Bangfu Ding ◽  
Jianhui Zhao ◽  
Yuanyuan Zhang

In this study, a simple TiN/SiO2/p-Si tunneling junction structure was fabricated via thermal oxidation growth on a Si substrate annealed at 600 °C.

2016 ◽  
Vol 30 (14) ◽  
pp. 1650141 ◽  
Author(s):  
Lujun Wei ◽  
Bai Sun ◽  
Wenxi Zhao ◽  
Hongwei Li ◽  
Xiangjiang Jia ◽  
...  

Nanoscale structure ZnO/BaTiO3/ZnO multilayer was fabricated on silicon (Si) substrate by RF magnetron sputtering system. The light-modulated resistive switching characteristics in ZnO/BaTiO3/ZnO devices were observed. The light-modulated resistive switching shows good repeatability at room temperature.


2013 ◽  
Vol 34 (10) ◽  
pp. 1265-1267 ◽  
Author(s):  
Shih-Chieh Wu ◽  
Hsien-Tsung Feng ◽  
Ming-Jiue Yu ◽  
I-Ting Wang ◽  
Tuo-Hung Hou

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  

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