Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure

2017 ◽  
Vol 19 (38) ◽  
pp. 25938-25948 ◽  
Author(s):  
Somsubhra Chakrabarti ◽  
Siddheswar Maikap ◽  
Subhranu Samanta ◽  
Surajit Jana ◽  
Anisha Roy ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Glucose Sensing ◽  
Glucose Detection ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
First Time ◽  
Switching Memory

The resistive switching characteristics of a scalable IrOx/Al2O3/W cross-point structure and its mechanism for pH/H2O2 sensing along with glucose detection have been investigated for the first time.

Novel cross-point resistive switching memory with self-formed schottky barrier

2010 ◽  
Author(s):  
Minseok Jo ◽  
Dong-jun Seong ◽  
Seonghyun Kim ◽  
Joonmyoung Lee ◽  
Wootae Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Resistive Switching ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
Switching Memory

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

2013 ◽  
Vol 529 ◽  
pp. 389-393
Author(s):  
Hsueh-Chih Tseng ◽  
Ting-Chang Chang ◽  
Kai-Hung Cheng ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
Interface Type ◽  
Switching Memory ◽  
Filament Type

scholarly journals Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications

RSC Advances ◽  
2020 ◽  
Vol 10 (52) ◽  
pp. 31342-31347
Author(s):  
Sobia Ali Khan ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Voltage Amplitude ◽  
Resistive Switching Memory ◽  
Sweep Voltage ◽  
Switching Characteristics ◽  
Switching Memory

Diverse resistive switching behaviors are observed in the Pt/HfAlOx/TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity.

A persistently increasing resistance ratio and repeatable non-volatile memory in AZO/CZTSe/FTO resistive switching devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850023 ◽  
Author(s):  
Pingping Zheng ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Shuangsuo Mao ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Sandwich Structure ◽  
Resistance Ratio ◽  
Resistive Switching Memory ◽  
Non Volatile Memory ◽  
Doped Zno ◽  
Volatile Memory ◽  
Memory Applications ◽  
First Time ◽  
Switching Memory

In this paper, the Cu2ZnSnSe4 (CZTSe) film was deposited on the fluorine-doped SnO2 (FTO), and Al-doped ZnO (AZO) and FTO act as top and bottom electrodes for constructing a sandwich structure, in which the AZO/CZTSe/FTO device not only represents outstanding non-volatile resistive switching memory behavior, but also shows a persistently increasing resistance ratio phenomenon for the first time. This work reveals that the device based on CZTSe film holds an excellent memory effect for non-volatile memory applications in the electronic equipment.

3-D Cross-Point Array Operation on ${\rm AlO}_{y}/{\rm HfO}_{x}$ -Based Vertical Resistive Switching Memory

2014 ◽  
Vol 61 (5) ◽  
pp. 1377-1381 ◽  
Author(s):  
Bin Gao ◽  
Bing Chen ◽  
Rui Liu ◽  
Feifei Zhang ◽  
Peng Huang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Cross Point ◽  
Resistive Switching Memory ◽  
Switching Memory
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