High-performance field emission based on nanostructured tin selenide for nanoscale vacuum transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (7) ◽  
pp. 3129-3137 ◽  
Author(s):  
Huu Duy Nguyen ◽  
Joon Sang Kang ◽  
Man Li ◽  
Yongjie Hu
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Rational Design ◽  
Two Dimensional ◽  
Tin Selenide ◽  
Vacuum Transistors

Rational design of two-dimensional tin selenide (SnSe) nanostructures enables high-performance field emission for developing nanoscale vacuum transistors.

Two-dimensional ZrC2 as a novel anode material with high capacity for Sodium ion battery

2021 ◽  
Author(s):  
Fei Zhang ◽  
Tao Jing ◽  
Shao Cai ◽  
Mingsen Deng ◽  
Dongmei Liang ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Anode Materials ◽  
High Performance ◽  
Rational Design ◽  
High Capacity ◽  
Lithium Ion ◽  
Sodium Ion ◽  
Sodium Ion Battery ◽  
Sodium Ion Batteries ◽  
Two Dimensional

Rational design of high-performance anode materials is of paramount importance for developing rechargeable lithium ion batteries (LIBs) and sodium ion batteries (SIBs). In this work, ZrC2 monolayer is predicted by...

Nanowire-assembled Co3O4@NiCo2O4 architectures for high performance all-solid-state asymmetric supercapacitors

2017 ◽  
Vol 5 (47) ◽  
pp. 24981-24988 ◽  
Author(s):  
Yao Lu ◽  
La Li ◽  
Di Chen ◽  
Guozhen Shen
Keyword(s):  
Solid State ◽  
High Performance ◽  
Rational Design ◽  
Two Dimensional ◽  
Ni Foam ◽  
Asymmetric Supercapacitors

A rational design to fabricate two-dimensional (2D) Co3O4@NiCo2O4 architectures composed of nanowires on a Ni foam substrate has been proposed.

Organic-semiconductor nanoarchitectonics for multi-valued logic circuits with ideal transfer characteristics

2021 ◽  
Author(s):  
Sun-Woo Jo ◽  
Jungsoo Choi ◽  
Ryoma Hayakawa ◽  
Yutaka Wakayama ◽  
Sungyeop Jung ◽  
...  
Keyword(s):  
Finite Element ◽  
Organic Semiconductor ◽  
High Performance ◽  
Rational Design ◽  
Logic Circuits ◽  
Model System ◽  
Design Approach ◽  
Two Dimensional ◽  
Transfer Characteristics ◽  
Dimensional Finite Element

We introduce a rational design approach to high-performance multi-valued logic circuits. Taking an organic-based ternary inverter as a model system, robust input parameters to a two-dimensional finite-element solver are estimated....

Prospects for convergent beam electron diffraction with a 200kV cold field-emission transmission electron microscope

1991 ◽  
Vol 49 ◽  
pp. 466-467
Author(s):  
J W Steeds ◽  
R Vincent
Keyword(s):  
Field Emission ◽  
High Performance ◽  
Small Diameter ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Medium Voltage ◽  
Transmission Electron ◽  
Good Crystallinity ◽  
Special Modification ◽  
Convergent Beam

We review the analytical powers which will become more widely available as medium voltage (200-300kV) TEMs with facilities for CBED on a nanometre scale come onto the market. Of course, high performance cold field emission STEMs have now been in operation for about twenty years, but it is only in relatively few laboratories that special modification has permitted the performance of CBED experiments. Most notable amongst these pioneering projects is the work in Arizona by Cowley and Spence and, more recently, that in Cambridge by Rodenburg and McMullan.There are a large number of potential advantages of a high intensity, small diameter, focussed probe. We discuss first the advantages for probes larger than the projected unit cell of the crystal under investigation. In this situation we are able to perform CBED on local regions of good crystallinity. Zone axis patterns often contain information which is very sensitive to thickness changes as small as 5nm. In conventional CBED, with a lOnm source, it is very likely that the information will be degraded by thickness averaging within the illuminated area.

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

Rational Design of a High Performance and Robust Solar Evaporator via 3D‐Printing Technology

2021 ◽  
pp. 2102649
Author(s):  
Sourav Chaule ◽  
Jongha Hwang ◽  
Seong‐Ji Ha ◽  
Jihun Kang ◽  
Jong‐Chul Yoon ◽  
...  
Keyword(s):  
3D Printing ◽  
High Performance ◽  
Rational Design ◽  
Printing Technology ◽  
3D Printing Technology
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