scholarly journals Charge-induced electromechanical actuation of Mo- and W-dichalcogenide monolayers

RSC Advances ◽  
2018 ◽  
Vol 8 (67) ◽  
pp. 38667-38672 ◽  
Author(s):  
Vuong Van Thanh ◽  
Nguyen Tuan Hung ◽  
Do Van Truong

Using first-principle density functional calculations, we investigate electromechanical properties of two-dimensional MX2 (M = Mo, W; X = S, Se, Te) monolayers with the 1H and 1T structures as a function of charge doping for both electron and hole doping.

RSC Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 952-957 ◽  
Author(s):  
Konstantina Iordanidou ◽  
Michel Houssa ◽  
Clas Persson

Using first principles calculations based on density functional theory the impact of hole doping on the magnetic and electronic properties of two dimensional PtS2 is studied.


2004 ◽  
Vol 4 (3) ◽  
pp. 471-477 ◽  
Author(s):  
P. Vajeeston ◽  
P. Ravindran ◽  
R. Vidya ◽  
H. Fjellvåg ◽  
A. Kjekshus

RSC Advances ◽  
2015 ◽  
Vol 5 (36) ◽  
pp. 28460-28466 ◽  
Author(s):  
M. Faraji ◽  
M. Sabzali ◽  
S. Yousefzadeh ◽  
N. Sarikhani ◽  
A. Ziashahabi ◽  
...  

The composition dependent electronic properties of the Mo1−xWxS2monolayer deposited over a TiO2(110) substrate were investigated based onab initiodensity functional calculations by applying periodic boundary conditions.


Nanoscale ◽  
2020 ◽  
Vol 12 (23) ◽  
pp. 12541-12550 ◽  
Author(s):  
Kaiyun Chen ◽  
Junkai Deng ◽  
Qian Shi ◽  
Xiangdong Ding ◽  
Jun Sun ◽  
...  

Charge doping could effectively modulate the charge density wave state of monolayer MoS2 with large strain output and superelasticity.


2015 ◽  
Vol 26 (01) ◽  
pp. 1550009 ◽  
Author(s):  
Fayyaz Hussain ◽  
Y. Q. Cai ◽  
M. Junaid Iqbal Khan ◽  
Muhammad Imran ◽  
Muhammad Rashid ◽  
...  

We demonstrate enhanced ferromagnetism in copper doped two-dimensional GaN monolayer ( GaN -ML). Our first principle calculation based on density functional theory predicted that nonmagnetic Cu -dopant with concentration of 6.25% to be ferromagnetic (FM) in 2D GaN layer which carries a magnetic moment of 2.0 μB per Cu atom and it is found to be long range magnetic coupling among the Cu -dopant. The Cu-dopant in 2D GaN -ML which can be explained in terms of p-d hybridization at Curie temperature and this dopant prefer the FM behavior in 2D GaN layer. Hence Cu doped 2D GaN layer shows strong magnetic properties so that it is a promising material in the field of spintronics.


RSC Advances ◽  
2016 ◽  
Vol 6 (65) ◽  
pp. 60271-60276 ◽  
Author(s):  
Biao Liu ◽  
Li-Juan Wu ◽  
Yu-Qing Zhao ◽  
Ling-Zhi Wang ◽  
Meng-Qiu Cai

The electronic properties of an MoS2 and graphene heterostructure are investigated by density functional calculations.


Author(s):  
Wentao Hu ◽  
Ke Yang ◽  
Alessandro Stroppa ◽  
Alessandra Continenza ◽  
Hua Wu

Two-dimensional ferromagnetic (2D FM) half-metal holds great potential for quantum magnetoelectronics and spintronic devices. Here, using density functional calculations and magnetic pictures, we study the electronic structure and magnetic properties...


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