Fast growth of high quality AlN films on sapphire using a dislocation filtering layer for ultraviolet light-emitting diodes
Keyword(s):
A simple strategy for the mass production of high-quality AlN epilayers on flat sapphire by utilizing a dislocation filtering layer.
2019 ◽
Vol 471
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pp. 231-238
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2010 ◽
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pp. 022102
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2003 ◽
Vol 32
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pp. 364-370
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pp. 254-257
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2008 ◽
Vol 32
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pp. 79-82
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