Fast growth of high quality AlN films on sapphire using a dislocation filtering layer for ultraviolet light-emitting diodes

CrystEngComm ◽  
2019 ◽  
Vol 21 (27) ◽  
pp. 4072-4078 ◽  
Author(s):  
Yi Zhang ◽  
Hanling Long ◽  
Jun Zhang ◽  
Bo Tan ◽  
Qian Chen ◽  
...  

A simple strategy for the mass production of high-quality AlN epilayers on flat sapphire by utilizing a dislocation filtering layer.

2010 ◽  
Vol 49 (2) ◽  
pp. 022102 ◽  
Author(s):  
Yusuke Sakai ◽  
Youhua Zhu ◽  
Shigeaki Sumiya ◽  
Makoto Miyoshi ◽  
Mitsuhiro Tanaka ◽  
...  

2021 ◽  
Vol 130 (19) ◽  
pp. 193103
Author(s):  
Hongliang Chang ◽  
Jingyuan Shan ◽  
Dongdong Liang ◽  
Yaqi Gao ◽  
Lulu Wang ◽  
...  

2015 ◽  
Vol 414 ◽  
pp. 254-257 ◽  
Author(s):  
Jianchang Yan ◽  
Junxi Wang ◽  
Yun Zhang ◽  
Peipei Cong ◽  
Lili Sun ◽  
...  

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