scholarly journals Surface effects on a photochromic spin-crossover iron(ii) molecular switch adsorbed on highly oriented pyrolytic graphite

Nanoscale ◽  
2019 ◽  
Vol 11 (42) ◽  
pp. 20006-20014 ◽  
Author(s):  
Lorenzo Poggini ◽  
Giacomo Londi ◽  
Magdalena Milek ◽  
Ahmad Naim ◽  
Valeria Lanzilotto ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Crossover ◽  
Pyrolytic Graphite ◽  
High Vacuum ◽  
Surface Effects ◽  
Molecular Switch ◽  
Ultra High Vacuum ◽  
Highly Oriented Pyrolytic Graphite

Thin films of Fe(ii) complex with a diarylethene-based ligand featuring spin-crossover have been grown by sublimation in ultra-high vacuum on highly oriented pyrolytic graphite and spectroscopically characterized through a multi technique approach.

Spin crossover materials evaporated under clean high vacuum and ultra-high vacuum conditions: from thin films to single molecules

2012 ◽  
Vol 22 (19) ◽  
pp. 9690 ◽  
Author(s):  
Tatiana Palamarciuc ◽  
Jenny C. Oberg ◽  
Fadi El Hallak ◽  
Cyrus F. Hirjibehedin ◽  
Michele Serri ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Crossover ◽  
High Vacuum ◽  
Single Molecules ◽  
Ultra High Vacuum

scholarly journals Conducting High-Spin (S = 1) Organic Diradical with Robust Stability

2020 ◽  
Author(s):  
Shuyang Zhang ◽  
Maren Pink ◽  
Tobias Junghoefer ◽  
Wenchao Zhao ◽  
Sheng-Ning Hsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Robust Stability ◽  
Ground State ◽  
Pyrolytic Graphite ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Paramagnetic Resonance ◽  
Triplet Ground State ◽  
Out Of Plane ◽  
Electron Paramagnetic

Triplet ground-state organic molecules are of interest with respect to several emerging technologies but usually show limited stability, especially, as thin films. We report an organic diradical, based entirely on two Blatter radicals, that possesses triplet ground state (2J/k ≈ 220 K, EST ≈ 0.4 kcal mol-1 ) and robust stability, with onset of decomposition above 264 C (TGA). Polycrystalline diradical is a good electrical conductor with conductivity comparable to the out-of-plane conductivity in highly oriented pyrolytic graphite (HOPG). The diradical is evaporated under ultra-high vacuum to form thin films, which are stable on air for at least 18 and 48 h, as demonstrated by X-ray photoelectron and electron paramagnetic resonance (EPR) spectroscopies, respectively. <br>

scholarly journals Room temperature control of spin states in a thin film of a photochromic iron(ii) complex

2018 ◽  
Vol 5 (3) ◽  
pp. 506-513 ◽  
Author(s):  
Lorenzo Poggini ◽  
Magdalena Milek ◽  
Giacomo Londi ◽  
Ahmad Naim ◽  
Giordano Poneti ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Temperature Control ◽  
Room Temperature ◽  
Spin Crossover ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Spin States ◽  
Molecular Spin

Thin films of a molecular spin crossover iron(ii) complex featuring a photochromic diarylethene-based ligand have been grown by sublimation in ultra-high vacuum on Au(111) and investigated by photoelectron spectroscopies.

scholarly journals Conducting High-Spin (S = 1) Organic Diradical with Robust Stability

2020 ◽  
Author(s):  
Shuyang Zhang ◽  
Maren Pink ◽  
Tobias Junghoefer ◽  
Wenchao Zhao ◽  
Sheng-Ning Hsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Robust Stability ◽  
Ground State ◽  
Pyrolytic Graphite ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Paramagnetic Resonance ◽  
Triplet Ground State ◽  
Out Of Plane ◽  
Electron Paramagnetic

Triplet ground-state organic molecules are of interest with respect to several emerging technologies but usually show limited stability, especially, as thin films. We report an organic diradical, based entirely on two Blatter radicals, that possesses triplet ground state (2J/k ≈ 220 K, EST ≈ 0.4 kcal mol-1 ) and robust stability, with onset of decomposition above 264 C (TGA). Polycrystalline diradical is a good electrical conductor with conductivity comparable to the out-of-plane conductivity in highly oriented pyrolytic graphite (HOPG). The diradical is evaporated under ultra-high vacuum to form thin films, which are stable on air for at least 18 and 48 h, as demonstrated by X-ray photoelectron and electron paramagnetic resonance (EPR) spectroscopies, respectively. <br>

Thin Pyrolytic Graphite Films for Electron Microscope Substrates

1971 ◽  
Vol 29 ◽  
pp. 226-227 ◽  
Author(s):  
George H. N. Riddle ◽  
Benjamin M. Siegel
Keyword(s):  
Vacuum Chamber ◽  
Pyrolytic Graphite ◽  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Graphite Substrate ◽  
Nickel Substrate ◽  
Routine Procedure ◽  
Field Electron Microscopy ◽  
Dark Field Electron

A routine procedure for growing very thin graphite substrate films has been developed. The films are grown pyrolytically in an ultra-high vacuum chamber by exposing (111) epitaxial nickel films to carbon monoxide gas. The nickel serves as a catalyst for the disproportionation of CO through the reaction 2C0 → C + CO2. The nickel catalyst is prepared by evaporation onto artificial mica at 400°C and annealing for 1/2 hour at 600°C in vacuum. Exposure of the annealed nickel to 1 torr CO for 3 hours at 500°C results in the growth of very thin continuous graphite films. The graphite is stripped from its nickel substrate in acid and mounted on holey formvar support films for use as specimen substrates.The graphite films, self-supporting over formvar holes up to five microns in diameter, have been studied by bright and dark field electron microscopy, by electron diffraction, and have been shadowed to reveal their topography and thickness. The films consist of individual crystallites typically a micron across with their basal planes parallel to the surface but oriented in different, apparently random directions about the normal to the basal plane.

TEM sample preparation of wear-tested room-temperature pulsed-laser-deposited thin films of MoS2 by ultramicrotomy

1993 ◽  
Vol 51 ◽  
pp. 1118-1119
Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck
Keyword(s):  
Thin Films ◽  
Sample Preparation ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Wear Testing ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Aerospace Applications

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

scholarly journals Strain-Relief Patterns and Kagome Lattice in Self-Assembled C60 Thin Films Grown on Cd(0001)

2021 ◽  
Vol 22 (13) ◽  
pp. 6880
Author(s):  
Zilong Wang ◽  
Minlong Tao ◽  
Daxiao Yang ◽  
Zuo Li ◽  
Mingxia Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Self Assembly ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Kagome Lattice ◽  
Tunneling Microscopy ◽  
Kagomé Lattice ◽  
Temperature Scanning ◽  
C60 Films

We report an ultra-high vacuum low-temperature scanning tunneling microscopy (STM) study of the C60 monolayer grown on Cd(0001). Individual C60 molecules adsorbed on Cd(0001) may exhibit a bright or dim contrast in STM images. When deposited at low temperatures close to 100 K, C60 thin films present a curved structure to release strain due to dominant molecule–substrate interactions. Moreover, edge dislocation appears when two different wavy structures encounter each other, which has seldomly been observed in molecular self-assembly. When growth temperature rose, we found two forms of symmetric kagome lattice superstructures, 2 × 2 and 4 × 4, at room temperature (RT) and 310 K, respectively. The results provide new insight into the growth behavior of C60 films.

AlN thin films fabricated by ultra-high vacuum electron-beam evaporation with ammonia for silicon-on-insulator application

2005 ◽  
Vol 239 (3-4) ◽  
pp. 327-334 ◽  
Author(s):  
Ming Zhu ◽  
Peng Chen ◽  
Ricky K.Y. Fu ◽  
Weili Liu ◽  
Chenglu Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Vacuum ◽  
Electron Beam Evaporation ◽  
Silicon On Insulator ◽  
Ultra High Vacuum

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

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