scholarly journals Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells

2019 ◽  
Vol 7 (44) ◽  
pp. 25347-25354 ◽  
Author(s):  
Huiyun Wei ◽  
Jionghua Wu ◽  
Peng Qiu ◽  
Sanjie Liu ◽  
Yingfeng He ◽  
...  

Plasma-enhanced atomic-layer-deposited GaN thin-films have been introduced into planar perovskite solar cells as electron transport layers.

2020 ◽  
Vol 8 (4) ◽  
pp. 1900878 ◽  
Author(s):  
Anand S. Subbiah ◽  
Arpan K. Dhara ◽  
Neha Mahuli ◽  
Suman Banerjee ◽  
Shaibal Kanti Sarkar

2019 ◽  
Vol 09 (05) ◽  
pp. 1950042 ◽  
Author(s):  
Shanming Ke ◽  
Bukui Du ◽  
Zhenggang Rao ◽  
Chun Huang ◽  
Peng Lin ◽  
...  

Hybrid perovskite solar cells (PSCs) have been intensively studied in recent years because of their high efficiency and low costs. For PSCs, the electron transport layer (ETL) is a key for its photoelectric conversion efficiency. Here we demonstrate the application of amorphous InGaZnO4 thin films as ETL for efficient PSCs by pulsed laser deposition (PLD). The PSC device using such InGaZnO4 amorphous film as ETL has achieved an efficiency of 15.1%. The outstanding performance is attributed to the excellent properties of amorphous InGaZnO4 oxide thin films, including high electron mobility and high transparency, what is more, the electronic properties of the films can be controlled by changing the partial pressure of oxygen in the deposition chamber and post-deposition annealing process. Our result will be helpful for preparation of large area PSCs and other opto-electric devices at low temperature by physical vapor deposition method.


2018 ◽  
Vol 54 (21) ◽  
pp. 2623-2626 ◽  
Author(s):  
Zhelu Hu ◽  
Hengyang Xiang ◽  
Mathilde Schoenauer Sebag ◽  
Laurent Billot ◽  
Lionel Aigouy ◽  
...  

Thickness-tunable and compact FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite thin films are achieved with a large grain size up to 12 microns. They are then employed to fabricate planar electron-transport-layer-free solar cells.


Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1504
Author(s):  
Chia-Hsun Hsu ◽  
Ka-Te Chen ◽  
Ling-Yan Lin ◽  
Wan-Yu Wu ◽  
Lu-Sheng Liang ◽  
...  

Tantalum (Ta)-doped titanium oxide (TiO2) thin films are grown by plasma enhanced atomic layer deposition (PEALD), and used as both an electron transport layer and hole blocking compact layer of perovskite solar cells. The metal precursors of tantalum ethoxide and titanium isopropoxide are simultaneously injected into the deposition chamber. The Ta content is controlled by the temperature of the metal precursors. The experimental results show that the Ta incorporation introduces oxygen vacancies defects, accompanied by the reduced crystallinity and optical band gap. The PEALD Ta-doped films show a resistivity three orders of magnitude lower than undoped TiO2, even at a low Ta content (0.8–0.95 at.%). The ultraviolet photoelectron spectroscopy spectra reveal that Ta incorporation leads to a down shift of valance band and conduction positions, and this is helpful for the applications involving band alignment engineering. Finally, the perovskite solar cell with Ta-doped TiO2 electron transport layer demonstrates significantly improved fill factor and conversion efficiency as compared to that with the undoped TiO2 layer.


2018 ◽  
Vol 10 (36) ◽  
pp. 30367-30378 ◽  
Author(s):  
Yinghuan Kuang ◽  
Valerio Zardetto ◽  
Roderick van Gils ◽  
Saurabh Karwal ◽  
Dibyashree Koushik ◽  
...  

2019 ◽  
Vol 7 (12) ◽  
pp. 7151-7158 ◽  
Author(s):  
Ranbir Singh ◽  
Anupam Giri ◽  
Monalisa Pal ◽  
Kaliannan Thiyagarajan ◽  
Junghyeok Kwak ◽  
...  

MoS2 thin films are directly synthesized over FTO/glass substrate in a one-step process and used as an efficient electron transport layer (ETL) for perovskite solar cells (PSCs).


Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 32 ◽  
Author(s):  
Seungtae Baek ◽  
Jeong Woo Han ◽  
Devthade Vidyasagar ◽  
Hanbyeol Cho ◽  
Hwi-Heon HA ◽  
...  

We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ~10 at%) thin films, a common transparent conducting oxide, by co-sputtering In2O3 and SnO2 at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion efficiency was obtained for the 77 at%-Sn TIO ETL with TiCl4 treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs.


2021 ◽  
Author(s):  
Song Fang ◽  
Bo Chen ◽  
Bangkai Gu ◽  
Linxing Meng ◽  
Hao Lu ◽  
...  

UV induced decomposition of perovskite material is one of main factors to severely destroy perovskite solar cells for instability. Here we report a UV stable perovskite solar cell with a...


Sign in / Sign up

Export Citation Format

Share Document