A new two-dimensional all-sp3 carbon allotrope with indirect band gap and superior carrier mobility

2021 ◽  
Author(s):  
Xing Yang ◽  
Yuwei Wang ◽  
Ruining Xiao ◽  
Tao Wen ◽  
Yulin Shen ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Band Gap ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Carbon Allotrope ◽  
Carbon Allotropes ◽  
Indirect Band Gap

The success of fascinating graphene has motivated much interest in exploiting new two-dimensional (2D) carbon allotropes with excellent electronic and mechanical properties such as graphdiyne and penta-graphene. However, there is...

scholarly journals Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

2021 ◽  
Author(s):  
Mingming Jiang ◽  
Yang Liu ◽  
Ruiming Dai ◽  
Kai Tang ◽  
Peng Wan ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Lattice Mismatch ◽  
Semiconductor Materials ◽  
Large Lattice ◽  
Ag Nanowires ◽  
Large Lattice Mismatch ◽  
Enhanced Luminescence ◽  
Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

scholarly journals Copper halide diselenium: predicted two-dimensional materials with ultrahigh anisotropic carrier mobilities

RSC Advances ◽  
2020 ◽  
Vol 10 (14) ◽  
pp. 8016-8026 ◽  
Author(s):  
Fazel Shojaei ◽  
Maryam Azizi ◽  
Zabiollah Mahdavifar ◽  
Busheng Wang ◽  
Gilles Frapper
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Two Dimensional ◽  
Copper Halide ◽  
New Class ◽  
Two Dimensional Materials ◽  
Bonding Properties ◽  
High Carrier ◽  
Indirect Band Gap ◽  
Very High

The physical and bonding properties of a new class of two-dimensional materials – CuXSe2 (X = Cl, Br) – are investigated using first-principles methods. 2D CuXSe2 are indirect band gap and possess extremely anisotropic and very high carrier mobilities.

Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

2019 ◽  
Vol 7 (12) ◽  
pp. 3569-3575 ◽  
Author(s):  
Shifeng Qian ◽  
Xiaowei Sheng ◽  
Xian Xu ◽  
Yuxiang Wu ◽  
Ning Lu ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Ring Network ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.

Achieving ultrahigh carrier mobilities and opening the band gap in two-dimensional Si2BN

2018 ◽  
Vol 20 (33) ◽  
pp. 21716-21723 ◽  
Author(s):  
Deobrat Singh ◽  
Sanjeev K. Gupta ◽  
Yogesh Sonvane ◽  
Tanveer Hussain ◽  
Rajeev Ahuja
Keyword(s):  
Band Gap ◽  
Scientific Community ◽  
Carrier Mobility ◽  
Two Dimensional

Two-dimensional Si2BN material has been theoretically predicted that the superior carrier mobility. That's why we believe that it is a promising candidates for 2D electronics applications and has attracted interest in the scientific community for further research.

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