scholarly journals Tin-selenide as a futuristic material: properties and applications

RSC Advances ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 6477-6503 ◽  
Author(s):  
Manoj Kumar ◽  
Sanju Rani ◽  
Yogesh Singh ◽  
Kuldeep Singh Gour ◽  
Vidya Nand Singh
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Resistive Switching ◽  
Gas Sensors ◽  
Material Properties ◽  
Topological Insulators ◽  
Memory Devices ◽  
Tin Selenide ◽  
Switching Devices

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

scholarly journals Review of CdTe1−xSex Thin Films in Solar Cell Applications

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 520 ◽  
Author(s):  
Lingg ◽  
Buecheler ◽  
Tiwari
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Material Properties ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Device Structures

Recent improvements in CdTe thin film solar cells have been achieved by using CdTe1−xSex as a part of the absorber layer. This review summarizes the published literature concerning the material properties of CdTe1−xSex and its application in current thin film CdTe photovoltaics. One of the important properties of CdTe1−xSex is its band gap bowing, which facilitates a lowering of the CdTe band gap towards the optimum band gap for highest theoretical efficiency. In practice, a CdTe1−xSex gradient is introduced to the front of CdTe, which induces a band gap gradient and allows for the fabrication of solar cells with enhanced short-circuit current while maintaining a high open-circuit voltage. In some device structures, the addition of CdTe1−xSex also allows for a reduction in CdS thickness or its complete elimination, reducing parasitic absorption of low wavelength photons.

Correlation of Material Properties and Open-Circuit Voltage of Amorphous Silicon Based Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Baojie Yan ◽  
Jeffrey Yang ◽  
Guozhen Yue ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Material Properties ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Open Circuit ◽  
Band Tail ◽  
Simulation Results

AbstractCorrelation of hydrogenated amorphous silicon (a-Si:H) alloy material properties and solar cell characteristics have been studied experimentally and by computer simulation. Simulation results show that all three solar cell parameters, short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF), decrease with increased defect density. For a given intrinsic layer thickness, a larger band gap (Eg) results in a higher Voc but a lower Jsc. However, FF does not depend on band gap. This allows us to distinguish the effect of change in band gap from that in defect density on the variation in Voc. For solar cells with good interface characteristics, a linear relation FF = βVoc + γ is obtained by light soaking experiments and simulation with different defect densities. The slope β is in the range from 2 to 3 V-1 depending on cell properties and light soaking condition, and the intersect γ depends mainly on the band gap. Comparing cells made with high H2 dilution to no H2 dilution, we find that a 58 mV enhancement in Voc with H2 dilution is due to both widening of band gap and reduced defect density. Simulation results also show that a narrower valence band tail leads to a higher Voc. We did not include this effect in the analysis due to lack of available data for correlation between H2 dilution and band tail narrowing.

scholarly journals Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽  
2020 ◽  
Vol 10 (69) ◽  
pp. 42249-42255
Author(s):  
Xiaohan Wu ◽  
Ruijing Ge ◽  
Yifu Huang ◽  
Deji Akinwande ◽  
Jack C. Lee
Keyword(s):  
Resistive Switching ◽  
Constant Voltage ◽  
Switching Device ◽  
Current Stress ◽  
Electric Stress ◽  
State Evolution ◽  
Conductive Bridge ◽  
Resistance State ◽  
Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

Efficient wide-band-gap copolymer donors for organic solar cells with perpendicularly placed benzodithiophene units

2021 ◽  
Vol 499 ◽  
pp. 229961
Author(s):  
Meiling Zhang ◽  
Xiaopeng Xu ◽  
Liyang Yu ◽  
Qiang Peng
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Organic Solar Cells ◽  
Wide Band ◽  
Wide Band Gap

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

scholarly journals Routes to develop a [S]/([S]+[Se]) gradient in wide band-gap Cu2ZnGe(S,Se)4 thin-film solar cells

2021 ◽  
Vol 868 ◽  
pp. 159253
Author(s):  
Andrea Ruiz-Perona ◽  
Galina Gurieva ◽  
Michael Sun ◽  
Tim Kodalle ◽  
Yudania Sánchez ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Thin Film Solar Cells ◽  
Wide Band Gap

scholarly journals Electronic, Structural, and Optical Structure of Mono-Doped and Co-Doped (210) TiO2 Brookite Surfaces for Application in Dye-Sensitized Solar Cells—A First Principles Study

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3918
Author(s):  
Ratshilumela S. Dima ◽  
Lutendo Phuthu ◽  
Nnditshedzeni E. Maluta ◽  
Joseph K. Kirui ◽  
Rapela R. Maphanga
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Dye Sensitized Solar Cells ◽  
Visible Region ◽  
Electromagnetic Spectrum ◽  
Doped Tio2 ◽  
Dye Sensitized ◽  
Sensitized Solar Cells ◽  
Co Doped ◽  
Optical Structure

Titanium dioxide (TiO2) polymorphs have recently gained a lot of attention in dye-sensitized solar cells (DSSCs). The brookite polymorph, among other TiO2 polymorphs, is now becoming the focus of research in DSSC applications, despite the difficulties in obtaining it as a pure phase experimentally. The current theoretical study used different nonmetals (C, S and N) and (C-S, C-N and S-N) as dopants and co-dopants, respectively, to investigate the effects of mono-doping and co-doping on the electronic, structural, and optical structure properties of (210) TiO2 brookite surfaces, which is the most exposed surface of brookite. The results show that due to the narrowing of the band gap and the presence of impurity levels in the band gap, all mono-doped and co-doped TiO2 brookite (210) surfaces exhibit some redshift. In particular, the C-doped, and C-N co-doped TiO2 brookite (210) surfaces exhibit better absorption in the visible region of the electromagnetic spectrum in comparison to the pure, S-doped, N-doped, C-S co-doped and N-S co-doped TiO2 brookite (210) surfaces.

High-Efficiency Lead-Free Wide Band Gap Perovskite Solar Cells via Guanidinium Bromide Incorporation

2021 ◽  
Author(s):  
Mengmeng Chen ◽  
Muhammad Akmal Kamarudin ◽  
Ajay K. Baranwal ◽  
Gaurav Kapil ◽  
Teresa S. Ripolles ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Wide Band ◽  
Lead Free ◽  
Wide Band Gap

scholarly journals Bandgap adjustment assisted preparation of >18% CsyFA1−yPbIxBr3−x-based perovskite solar cells using a hybrid spraying process

RSC Advances ◽  
2021 ◽  
Vol 11 (29) ◽  
pp. 17595-17602
Author(s):  
Shengquan Fu ◽  
Yueyue Xiao ◽  
Xinxin Yu ◽  
Tianxing Xiang ◽  
Fei Long ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Grain Morphology ◽  
Ultrasonic Spray ◽  
Spraying Process

High-efficiency perovskite solar cells with good grain morphology and adjustable band gap were prepared by ultrasonic spray.

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