scholarly journals Large thermoelectric power variations in epitaxial thin films of layered perovskite GdBaCo2O5.5±δ with a different preferred orientation and strain

2020 ◽  
Vol 8 (38) ◽  
pp. 19975-19983
Author(s):  
Arindom Chatterjee ◽  
Emigdio Chavez-Angel ◽  
Belén Ballesteros ◽  
José Manuel Caicedo ◽  
Jessica Padilla-Pantoja ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Tensile Strain ◽  
Preferred Orientation ◽  
Oxygen Stoichiometry ◽  
Layered Perovskite ◽  
Epitaxial Thin Films ◽  
P Type

Oxygen stoichiometry in epitaxial GdBaCo2O5.5±δ films accommodates the strain, which substantially affects thermoelectric properties, bringing the material from p-type (tensile strain c⊥-oriented on STO) to n-type thermopower (compressive b⊥ on LAO).

Rapid thermal annealing induced the c-axis (00 l) preferred orientation and the p-type thermoelectric properties of Bi-Sb-Te thin films

2020 ◽  
Vol 706 ◽  
pp. 138094 ◽  
Author(s):  
Athorn Vora–ud ◽  
Somporn Thaowonkaew ◽  
Jessada Khajonrit ◽  
Kunchit Singsoog ◽  
Pennapa Muthitamongkol ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Thermoelectric Properties ◽  
Rapid Thermal Annealing ◽  
Preferred Orientation ◽  
P Type

scholarly journals Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO3 Transparent Thin Films

2021 ◽  
Author(s):  
Dong Han ◽  
Rahma Moalla ◽  
Ignasi Fina ◽  
Valentina M. Giordano ◽  
Marc d’Esperonnat ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Epitaxial Strain ◽  
P Type

Microstructures and thermoelectric properties of p-type Bi x Sb2−x Te3 thin films with various compositions

2013 ◽  
Vol 9 (6) ◽  
pp. 709-713 ◽  
Author(s):  
Junqiang Song ◽  
Qin Yao ◽  
Ting Wu ◽  
Xun Shi ◽  
Lidong Chen
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
P Type

Power generation performance of π-structure thermoelectric device using NaCo2O4 and Mg2Si elements

2013 ◽  
Vol 1490 ◽  
pp. 185-190 ◽  
Author(s):  
Tomoyuki Nakamura ◽  
Kazuya Hatakeyama ◽  
Masahiro Minowa ◽  
Youhiko Mito ◽  
Koya Arai ◽  
...  
Keyword(s):  
Power Generation ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Waste Heat ◽  
Maximum Output Power ◽  
Magnesium Silicide ◽  
Thermoelectric Device ◽  
Maximum Output ◽  
Thermoelectric Power Generation ◽  
P Type

ABSTRACTThermoelectric power generation has been attracting attention as a technology for waste heat utilization in which thermal energy is directly converted into electric energy. It is well known that layered cobalt oxide compounds such as NaCo2O4 and Ca3Co4O9 have high thermoelectric properties in p-type oxide semiconductors. However, in most cases, the thermoelectric properties in n-type oxide materials are not as high. Therefore, n-type magnesium silicide (Mg2Si) has been studied as an alternative due to its non-toxicity, environmental friendliness, lightweight property, and comparative abundance compared with other TE systems. In this study, we fabricated π-structure thermoelectric power generation devices using p-type NaCo2O4 elements and n-type Mg2Si elements. The p- and n-type sintering bodies were fabricated by spark plasma sintering (SPS). To reduce the resistance at the interface between elements and electrodes, we processed the surface of the elements before fabricating the devices. The end face of a Mg2Si element was covered with Ni by SPS and that of a NaCo2O4 element was coated with Ag by silver paste and soldering.The thermoelectric device consisted of 18 pairs of p-type and n-type legs connected with Ag electrodes. The cross-sectional and thickness dimensions of the p-type elements were 3.0 mm × 5.0 mm × 7.6 mm (t) and those of the n-type elements were 3.0 mm × 3.0 mm × 7.6 mm (t). The open circuit voltage was 1.9 V and the maximum output power was 1.4 W at a heat source temperature of 873 K and a cooling water temperature of 283 K in air.

Effects of Cation Substitution on the Thermoelectric Properties in Ca-Co-O

2001 ◽  
Vol 691 ◽  
Author(s):  
Ichiro Matsubara ◽  
Ryoji Funahashi ◽  
Masahiro Shikano ◽  
Kei Sasaki ◽  
Hiroyuki Enomoto
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Thermoelectric Power ◽  
Compressive Stress ◽  
Thermoelectric Properties ◽  
Plane Stress ◽  
Solution Process ◽  
Cation Substitution ◽  
Combinatorial Approach ◽  
Solid Solution Range

ABSTRACTWe have prepared (Ca1−x−yMxBiy)3Co4Oz (M = Mg, Sr, and Ba) thin films by a combinatorial approach using a solution process. In the systems of (Ca1−x−yMxBiy)3Co4Oz (M = Mg, Sr, and Ba), solid solution range was determined to be × < 0.8 (M = Sr, y = 0), x < 1.0 (M = Mg, y = 0), x = 0.0 (M = Ba, y = 0), and x < 0.4 (M = Bi, x = 0). No solid solution range was obtained for the substitution of Ba for Ca site. The in-plane compressive stress in the CoO2 sublattice is controllable by the cation substitution for Ca in the (Ca2CoO3) sublattice. With increasing in-plane stress, the magnitude of thermoelectric power and resistivity increased.

scholarly journals Direct Comparison of Structural and Electrical Properties of Epitaxial (001)-, (116)-, and (103)-Oriented SrBi2Ta2O9 Thin Films on SrTiO3 and Silicon Substrates

2000 ◽  
Vol 655 ◽  
Author(s):  
H. N. Lee ◽  
A. Pignolet ◽  
S. Senz ◽  
C. Harnagea ◽  
D. Hesse
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Bottom Electrode ◽  
Three Dimensional ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Silicon Substrates ◽  
Epitaxial Thin Films ◽  
Structural And Electrical Properties ◽  
First Time

AbstractAnisotropies of the properties of the bismuth-layered perovskite SrBi2Ta2O9 (SBT) have been investigated using epitaxial thin films grown by pulsed laser deposition both on conducting Nb-doped SrTiO3 (STO) single crystal substrates and on Si(100) substrates. It has been found that the three-dimensional epitaxy relationship SBT(001)∥STO(001); SBT [110] ∥STO[100] can be applied to all SBT thin films on STO substrates of (001), (011), and (111) orientations. An about 1.7 times larger remanent polarization was obtained in (103)-oriented SBT films than in that of (116) orientation, while the (001)-oriented SBT films revealed no ferroelectricity along their c-axis. Non-c-axis-oriented SBT films with a well-defined (116) orientation were also grown on silicon substrates for the first time. They were deposited on Si(100) covered with a conducting SrRuO3 (110) bottom electrode on a YSZ(100) buffer layer.

Preparation of metastable Sr3Co4O9 epitaxial thin films with controlled orientation and their anisotropic thermoelectric properties

2006 ◽  
Vol 99 (9) ◽  
pp. 093704 ◽  
Author(s):  
Akihiro Sakai ◽  
Tsutomu Kanno ◽  
Satoshi Yotsuhashi ◽  
Satoshi Okada ◽  
Hideaki Adachi
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Epitaxial Thin Films

scholarly journals Preparation and thermoelectric properties of p-type Bi0.52Sb1.48Te3 + 3% Te thin films

2012 ◽  
Vol 57 (32) ◽  
pp. 4220-4224 ◽  
Author(s):  
JianSheng Zhang ◽  
JunYou Yang ◽  
ShuangLong Feng ◽  
ZhengLai Liu ◽  
JiangYing Peng
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
P Type
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