Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide

2021 ◽  
Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
High Performance ◽  
Film Growth ◽  
Transition Metal Dichalcogenides ◽  
Electronic Systems ◽  
Intrinsic Defects ◽  
Diethyl Sulfide ◽  
Metal Dichalcogenides

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

scholarly journals High-performance flexible nanoscale transistors based on transition metal dichalcogenides

2021 ◽  
Author(s):  
Alwin Daus ◽  
Sam Vaziri ◽  
Victoria Chen ◽  
Çağıl Köroğlu ◽  
Ryan W. Grady ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides ◽  
Nanoscale Transistors

scholarly journals Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Infrared Detector ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Electric Transport ◽  
Defect Engineering ◽  
Fast Switching ◽  
Metal Dichalcogenides ◽  
Poor Stability

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.

Tuning the catalytic functionality of transition metal dichalcogenides grown by chemical vapour deposition

2017 ◽  
Vol 5 (29) ◽  
pp. 14950-14968 ◽  
Author(s):  
Gi Woong Shim ◽  
Woonggi Hong ◽  
Sang Yoon Yang ◽  
Sung-Yool Choi
Keyword(s):  
Transition Metal ◽  
Chemical Vapour Deposition ◽  
High Performance ◽  
Vapour Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapour ◽  
Catalytic Systems ◽  
Metal Dichalcogenides

This review provides insights for the design of synthetic schemes and catalytic systems of CVD-grown functional TMDs for high performance HER applications.

Observing Grain Boundaries in CVD-Grown Monolayer Transition Metal Dichalcogenides

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11401-11408 ◽  
Author(s):  
Thuc Hue Ly ◽  
Ming-Hui Chiu ◽  
Ming-Yang Li ◽  
Jiong Zhao ◽  
David J. Perello ◽  
...  
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

Controlled synthesis and comparison of NiCo2S4/graphene/2D TMD ternary nanocomposites for high-performance supercapacitors

2016 ◽  
Vol 52 (59) ◽  
pp. 9251-9254 ◽  
Author(s):  
Jianfeng Shen ◽  
Pei Dong ◽  
Robert Baines ◽  
Xiaowei Xu ◽  
Zhuqing Zhang ◽  
...  
Keyword(s):  
Energy Storage ◽  
Transition Metal ◽  
High Performance ◽  
Electrode Materials ◽  
Synergistic Effects ◽  
Transition Metal Dichalcogenides ◽  
Controlled Synthesis ◽  
Metal Dichalcogenides

Novel ternary electrode materials based on graphene, NiCo2S4, and transition metal dichalcogenides were designed and fabricated with the intention of exploiting synergistic effects conducive to supercapacitive energy storage.

scholarly journals Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 803 ◽  
Author(s):  
Filippo Giannazzo ◽  
Emanuela Schilirò ◽  
Giuseppe Greco ◽  
Fabrizio Roccaforte
Keyword(s):  
Atomic Force Microscopy ◽  
Transition Metal ◽  
Grain Boundaries ◽  
Schottky Barrier ◽  
Transition Metal Dichalcogenides ◽  
Device Fabrication ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Dichalcogenides

Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future electronic and optoelectronic applications. However, their electronic properties are strongly affected by peculiar nanoscale defects/inhomogeneities (point or complex defects, thickness fluctuations, grain boundaries, etc.), which are intrinsic of these materials or introduced during device fabrication processes. This paper reviews recent applications of conductive atomic force microscopy (C-AFM) to the investigation of nanoscale transport properties in TMDs, discussing the implications of the local phenomena in the overall behavior of TMD-based devices. Nanoscale resolution current spectroscopy and mapping by C-AFM provided information on the Schottky barrier uniformity and shed light on the mechanisms responsible for the Fermi level pinning commonly observed at metal/TMD interfaces. Methods for nanoscale tailoring of the Schottky barrier in MoS2 for the realization of ambipolar transistors are also illustrated. Experiments on local conductivity mapping in monolayer MoS2 grown by chemical vapor deposition (CVD) on SiO2 substrates are discussed, providing a direct evidence of the resistance associated to the grain boundaries (GBs) between MoS2 domains. Finally, C-AFM provided an insight into the current transport phenomena in TMD-based heterostructures, including lateral heterojunctions observed within MoxW1–xSe2 alloys, and vertical heterostructures made by van der Waals stacking of different TMDs (e.g., MoS2/WSe2) or by CVD growth of TMDs on bulk semiconductors.

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