Analytical modelling and performance analysis of gate engineered TG silicon‐on‐nothing metal–oxide–semiconductor field‐effect transistor

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2017.0473 ◽

2018 ◽

Vol 12 (5) ◽

pp. 557-562 ◽

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Subir K. Sarkar

Keyword(s):

Performance Analysis ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Analytical Modelling ◽

Oxide Semiconductor ◽

Effect Transistor ◽

And Performance

Download Full-text

Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor

Indian Journal of Physics ◽

10.1007/s12648-014-0584-5 ◽

2014 ◽

Vol 89 (6) ◽

pp. 593-598

Author(s):

S. Sarkhel ◽

B. Manna ◽

S. K. Sarkar

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

And Performance

Download Full-text

Performance Analysis of Impact of Source/Drain Doping Gradients Well as Roll-Off Widths on Gate Induced Drain Leakage of Double Gate Metal Oxide Semiconductor Field Effect Transistor

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2426 ◽

2018 ◽

Vol 13 (11) ◽

pp. 1705-1710

Author(s):

Parveen Kumar ◽

Sandeep Singh Gill

Keyword(s):

Performance Analysis ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

Download Full-text

D.C Performance Analysis of Sub-Threshold Source-Coupled Logic Circuit Using Double Gate Junction-Less Metal Oxide Semiconductor Field Effect Transistor for Low-Power Application

Sensor Letters ◽

10.1166/sl.2019.4104 ◽

2019 ◽

Vol 17 (7) ◽

pp. 538-545 ◽

Author(s):

Dipanjan Sen ◽

Savio Jay Sengupta ◽

Swarnil Roy ◽

Manash Chanda ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Logic Circuit ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Power Application

Download Full-text

Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal–Oxide–Semiconductor Field-Effect Transistor and Performance Perspective

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.1206 ◽

2003 ◽

Vol 42 (Part 1, No. 3) ◽

pp. 1206-1211 ◽

Author(s):

Hidehiko Nakajima ◽

Akira Kawamura ◽

Kenji Komiya ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Simulation Models ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Tunneling Barrier ◽

Effect Transistor ◽

And Performance

Download Full-text

Performance analysis of boron nitride embedded armchair graphene nanoribbon metal–oxide–semiconductor field effect transistor with Stone Wales defects

Journal of Applied Physics ◽

10.1063/1.4862311 ◽

2014 ◽

Vol 115 (3) ◽

pp. 034501 ◽

Author(s):

Anuja Chanana ◽

Amretashis Sengupta ◽

Santanu Mahapatra

Keyword(s):

Performance Analysis ◽

Boron Nitride ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Armchair Graphene Nanoribbon ◽

Armchair Graphene

Download Full-text

InGaAs and HfO2 Based Junctionless Vertical Double Gate Metal Oxide Semiconductor Field Effect Transistor: Performance Analysis

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2015.3704 ◽

2015 ◽

Vol 12 (1) ◽

pp. 101-104 ◽

Author(s):

Pankaj Dobwal ◽

B. Santhibhushan ◽

Anurag Srivastava

Keyword(s):

Performance Analysis ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor

Download Full-text

Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

Download Full-text

A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Effect Transistor

Download Full-text

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

Download Full-text

High responsivity in integrated optically controlled metal-oxide semiconductor field-effect transistor using directly bonded SiO2-InP

IEEE Photonics Technology Letters ◽

10.1109/68.605530 ◽

1997 ◽

Vol 9 (8) ◽

pp. 1143-1145 ◽

Author(s):

T. Yamagata ◽

K. Shimomura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Responsivity ◽

Effect Transistor

Download Full-text