Current/voltage characteristics of transistors operating in current-mode second breakdown

1979 ◽  
Vol 3 (2) ◽  
pp. 41 ◽  
Author(s):  
J.E. Carroll ◽  
P.J. Probert
Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.


2020 ◽  
Vol 1686 ◽  
pp. 012019
Author(s):  
Andrey V. Kaziev ◽  
Kseniia A. Leonova ◽  
Maksim M. Kharkov ◽  
Alexander V. Tumarkin ◽  
Dobrynya V. Kolodko ◽  
...  

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