Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications

Applied Physics Letters ◽

10.1063/1.122582 ◽

1998 ◽

Vol 73 (19) ◽

pp. 2760-2762 ◽

Author(s):

M. Behet ◽

K. van der Zanden ◽

G. Borghs ◽

A. Behres

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Quantum Well Structures ◽

Gaas Substrates

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Nonmonotonous Electron Mobility in Double Quantum Well Pseudomorphic High Electron Mobility Transistor Structure

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783894 ◽

2019 ◽

Author(s):

Sangita R. Panda ◽

Sudhakar Das ◽

Arttatran Sahu ◽

Ajit Kumar Panda ◽

Trinath Sahu

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Double Quantum ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Double Quantum Well

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Structural asymmetry induced nonmonotonic electron mobility in pseudomorphic double quantum well high electron mobility transistor structure

Physica Scripta ◽

10.1088/1402-4896/ab5ba5 ◽

2020 ◽

Vol 95 (5) ◽

pp. 054003

Author(s):

Ajit Kumar Panda ◽

Sangita R Panda ◽

Arttatran Sahu ◽

Sudhakar Das ◽

Trinath Sahu

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Double Quantum ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Structural Asymmetry ◽

Double Quantum Well

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Correlation between optical and electrical properties in In0.52Al0.48As∕InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.2222404 ◽

2006 ◽

Vol 100 (3) ◽

pp. 033705 ◽

Author(s):

L. J. Cui ◽

Y. P. Zeng ◽

B. Q. Wang ◽

Z. P. Zhu ◽

S. L. Guo ◽

...

Keyword(s):

Electrical Properties ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Optical And Electrical Properties ◽

High Electron Mobility ◽

Gaas Substrates

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Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590707 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1131 ◽

Author(s):

W. E. Hoke ◽

P. J. Lemonias ◽

J. J. Mosca ◽

P. S. Lyman ◽

A. Torabi ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Device Performance ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1376384 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1510 ◽

Author(s):

D. Lubyshev ◽

W. K. Liu ◽

T. R. Stewart ◽

A. B. Cornfeld ◽

X. M. Fang ◽

...

Keyword(s):

Electron Mobility ◽

Strain Relaxation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates

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One‐dimensional transport in quantum well wire‐high electron mobility transistor

Applied Physics Letters ◽

10.1063/1.97232 ◽

1986 ◽

Vol 49 (25) ◽

pp. 1738-1740 ◽

Author(s):

Perng‐fei Yuh ◽

K. L. Wang

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

One Dimensional ◽

Quantum Well Wire

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Terahertz Photomixing in Heterostructure Device Based on Integration of High-Electron Mobility Transistor and Quantum-Well Infrared Photodetector

2005 International Topical Meeting on Microwave Photonics ◽

10.1109/mwp.2005.203609 ◽

2005 ◽

Author(s):

V. Ryzhii ◽

M. Ryzhii ◽

I. Khmyrova ◽

T. Otsuji ◽

M.S. Shur

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Infrared Photodetector ◽

High Electron Mobility ◽

Quantum Well Infrared Photodetector

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Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In[sub 0.7]Ga[sub 0.3]As/In[sub 0.52]Al[sub 0.48]As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1387454 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1515 ◽

Author(s):

I. Watanabe ◽

K. Kanzaki ◽

T. Aoki ◽

T. Kitada ◽

S. Shimomura ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Electron Mobility ◽

Molecular Beam ◽

Impurity Scattering ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility

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Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/1/017 ◽

1999 ◽

Vol 14 (1) ◽

pp. 103-109 ◽

Author(s):

D Y Lin ◽

Y S Huang ◽

K K Tiong ◽

F H Pollak ◽

K R Evans

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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High electron mobility in modulation‐doped Si/SiGe quantum well structures

Applied Physics Letters ◽

10.1063/1.105718 ◽

1991 ◽

Vol 59 (25) ◽

pp. 3318-3320 ◽

Author(s):

G. Schuberth ◽

F. Schäffler ◽

M. Besson ◽

G. Abstreiter ◽

E. Gornik

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Quantum Well Structures

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