Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy

1999 ◽  
Vol 74 (11) ◽  
pp. 1570-1572 ◽  
Author(s):  
D. H. Zhang ◽  
W. Shi ◽  
P. H. Zhang ◽  
S. F. Yoon ◽  
X. Shi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Strained Quantum Well

Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

2004 ◽  
Vol 96 (1) ◽  
pp. 44-48 ◽  
Author(s):  
Takeo Kageyama ◽  
Tomoyuki Miyamoto ◽  
Masataka Ohta ◽  
Tetsuya Matsuura ◽  
Yasutaka Matsui ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Surfactant Effect ◽  
Strained Quantum Well ◽  
Highly Strained ◽  
Nm Range
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