Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells

2000 ◽  
Vol 77 (18) ◽  
pp. 2867-2869 ◽  
Author(s):  
F. Hegeler ◽  
M. O. Manasreh ◽  
C. Morath ◽  
P. Ballet ◽  
H. Yang ◽  
...  
1999 ◽  
Vol 607 ◽  
Author(s):  
H.S. Gingrich ◽  
C. Morath ◽  
M.O. Manasreh ◽  
P. Ballet ◽  
J.B. Smathers ◽  
...  

AbstractOptical absorption spectra of intersubband transitions in heavily proton irradiated n-type GaAs/AlGaAs multiple quantum wells were studied as a function of isochronal and isothermal annealing. The absorption spectra of intersubband transitions were depleted in samples irradiated with 1MeV proton doses higher than 1.0 × 1014 cm−2. Thermal annealing of the irradiated samples show that the intersubband transitions are recovered. The relatively lower annealing temperatures at which the recovery is observed indicate that the irradiation-induced defects that trapped the two-dimensional electron gas in the quantum wells are vacancy and interstitial related defects. Once these traps are thermally annealed the electrons are released back to the quantum wells, resulting in the recovery of the intersubband transitions.


2007 ◽  
Vol 90 (16) ◽  
pp. 162111
Author(s):  
J. M. Li ◽  
K. Y. Qian ◽  
Q. S. Zhu ◽  
Z. G. Wang

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