High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy
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1996 ◽
Vol 14
(3)
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pp. 2271
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2001 ◽
Vol 228
(1)
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pp. 99-102
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2013 ◽
Vol 25
(6)
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pp. 1523-1526
1992 ◽
Vol 120
(1-4)
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pp. 167-171
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