Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes

Journal of Applied Physics ◽

10.1063/1.1524017 ◽

2002 ◽

Vol 92 (12) ◽

pp. 7684-7686 ◽

Author(s):

C. N. Harrison ◽

J. P. R. David ◽

M. Hopkinson ◽

G. J. Rees

Keyword(s):

Temperature Dependence ◽

Avalanche Multiplication

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Temperature dependence of avalanche multiplication in submicron silicon devices

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. ◽

10.1109/essder.2005.1546631 ◽

2005 ◽

Author(s):

D.J. Massey ◽

J.P.R. David ◽

G.J. Rees

Keyword(s):

Temperature Dependence ◽

Avalanche Multiplication ◽

Silicon Devices

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Temperature dependence of avalanche multiplication in inp-based HBTs with InGaAs/InP composite collector: device characterization and physics model

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.820299 ◽

2003 ◽

Vol 50 (12) ◽

pp. 2335-2343 ◽

Author(s):

Hong Wang ◽

Hong Yang ◽

Wah-Peng Neo ◽

K. Radhakrishnan ◽

Chee Leong Tan

Keyword(s):

Temperature Dependence ◽

Avalanche Multiplication ◽

Device Characterization ◽

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Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P

Journal of Applied Physics ◽

10.1063/1.4865743 ◽

2014 ◽

Vol 115 (6) ◽

pp. 064507 ◽

Author(s):

Jennifer S. L. Ong ◽

Jo S. Ng ◽

Andrey B. Krysa ◽

John P. R. David

Keyword(s):

Temperature Dependence ◽

Breakdown Voltage ◽

Avalanche Multiplication

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TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS

Semiconductor Devices: Pioneering Papers ◽

10.1142/9789814503464_0012 ◽

1991 ◽

pp. 144-146

Author(s):

C. R. Crowell ◽

S. M. Sze

Keyword(s):

Temperature Dependence ◽

Avalanche Multiplication

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Temperature dependence of avalanche multiplication in semiconductors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1966.15807 ◽

1966 ◽

Vol ED-13 (8/9) ◽

pp. 677-677 ◽

Author(s):

C.R. Crowell ◽

S.M. Sze

Keyword(s):

Temperature Dependence ◽

Avalanche Multiplication

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TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS

Applied Physics Letters ◽

10.1063/1.1754731 ◽

1966 ◽

Vol 9 (6) ◽

pp. 242-244 ◽

Author(s):

C. R. Crowell ◽

S. M. Sze

Keyword(s):

Temperature Dependence ◽

Avalanche Multiplication

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Temperature dependence of breakdown and avalanche multiplication in In/sub 0.53/Ga/sub 0.47/As diodes and heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.816553 ◽

2003 ◽

Vol 50 (10) ◽

pp. 2021-2026 ◽

Author(s):

M. Yee ◽

W.K. Ng ◽

J.P.R. David ◽

P.A. Houston ◽

C.H. Tan ◽

...

Keyword(s):

Temperature Dependence ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Avalanche Multiplication

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Temperature dependence of the avalanche multiplication process and the impact ionization coefficients in Al0.8Ga0.2As

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2010.11.114 ◽

2011 ◽

Vol 629 (1) ◽

pp. 154-156 ◽

Author(s):

A.M. Barnett ◽

J.E. Lees ◽

D.J. Bassford ◽

J.S. Ng ◽

C.H. Tan ◽

...

Keyword(s):

Temperature Dependence ◽

Impact Ionization ◽

Avalanche Multiplication ◽

Multiplication Process ◽

Ionization Coefficients ◽

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Temperature dependence of avalanche multiplication in GaAs [p i n diodes]

The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ◽

10.1109/edmo.2002.1174962 ◽

2003 ◽

Author(s):

C. Groves ◽

R. Ghin ◽

C.N. Harrison ◽

J.P.R. David ◽

G.J. Rees

Keyword(s):

Temperature Dependence ◽

Avalanche Multiplication

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Temperature dependence of avalanche multiplication in spiked electric fields

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904263 ◽

2002 ◽

Author(s):

M.R. van den Berg ◽

L.K. Nanver ◽

J.W. Slotboom

Keyword(s):

Temperature Dependence ◽

Electric Fields ◽

Avalanche Multiplication

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