Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells

2004 ◽  
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pp. 666-668 ◽  
Author(s):  
G. Walter ◽  
J. Elkow ◽  
N. Holonyak ◽  
R. D. Heller ◽  
X. B. Zhang ◽  
...  
2007 ◽  
Vol 34 (7) ◽  
pp. 189-193
Author(s):  
N. V. Dyakonova ◽  
O. A. Klimenko ◽  
W. Knap ◽  
Ya. A. Mityagin ◽  
V. N. Murzin ◽  
...  

1997 ◽  
Vol 12 (4) ◽  
pp. 427-430 ◽  
Author(s):  
P I Birjulin ◽  
S P Grishechkina ◽  
A S Ignatiev ◽  
Yu V Kopaev ◽  
S S Shmelev ◽  
...  

2015 ◽  
Vol 49 (11) ◽  
pp. 1425-1429 ◽  
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D. A. Firsov ◽  
L. E. Vorobjev ◽  
M. Ya. Vinnichenko ◽  
R. M. Balagula ◽  
M. M. Kulagina ◽  
...  

Author(s):  
D.K. Loginov ◽  
A.V. Donets

AbstractExcitonic waves propagating in thick GaAs/AlGaAs quantum wells form an interference pattern, which is observed as oscillations in the reflectance spectra. Oscillations in the spectra of wide GaAs quantum wells should reveal a non-trivial behavior as a function of the external uniform electric field as it is found in the theory developed in the present work. The oscillations are suppressed as the electric field increases and then reappear again with an opposite phase at the further rise of the field.


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