Nitric acid oxidation of silicon at ∼120°C to form 3.5-nm SiO2∕Si structure with good electrical characteristics

2004 ◽  
Vol 85 (17) ◽  
pp. 3783-3785 ◽  
Author(s):  
Asuha ◽  
Shigeki Imai ◽  
Masao Takahashi ◽  
Hikaru Kobayashi
Keyword(s):  
Nitric Acid ◽  
Acid Oxidation ◽  
Electrical Characteristics ◽  
Nitric Acid Oxidation

Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi[sub 2] Nanocrystals Nonvolatile Memory

2010 ◽  
Vol 157 (3) ◽  
pp. H332
Author(s):  
Chih-Wei Hu ◽  
Ting-Chang Chang ◽  
Chun-Hao Tu ◽  
Yang-Dong Chen ◽  
Chao-Cheng Lin ◽  
...  
Keyword(s):  
Nitric Acid ◽  
Nonvolatile Memory ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation

Low temperature fabrication of 5–10nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method

2010 ◽  
Vol 256 (18) ◽  
pp. 5610-5613 ◽  
Author(s):  
Yousuke Fukaya ◽  
Takashi Yanase ◽  
Yasushi Kubota ◽  
Shigeki Imai ◽  
Taketoshi Matsumoto ◽  
...  
Keyword(s):  
Nitric Acid ◽  
Low Temperature ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation

Improvement of Minority Carrier Lifetime and Si Solar Cell Characteristics by Nitric Acid Oxidation Method

2014 ◽  
Vol 3 (7) ◽  
pp. Q137-Q141 ◽  
Author(s):  
Fumio Shibata ◽  
Daisuke Ishibashi ◽  
Shoji Ogawara ◽  
Taketoshi Matsumoto ◽  
Chang-Ho Kim ◽  
...  
Keyword(s):  
Solar Cell ◽  
Nitric Acid ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Acid Oxidation ◽  
Oxidation Method ◽  
Si Solar Cell ◽  
Nitric Acid Oxidation
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