Growth of InGaAsP based asymmetric quantum well infrared photodetector using metalorganic vapor phase epitaxy

2004 ◽  
Vol 96 (11) ◽  
pp. 6799-6802 ◽  
Author(s):  
H. Li ◽  
T. Mei ◽  
K. P. Lantz ◽  
G. Karunasiri
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
Asymmetric Quantum

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure

New structure by selective regrowth in multi-quantum well laser diodes performed by low pressure metalorganic vapor phase epitaxy

1994 ◽  
Vol 145 (1-4) ◽  
pp. 866-874 ◽  
Author(s):  
Nobuyuki Otsuka ◽  
Masahiro Kito ◽  
Yoshihiro Mori ◽  
Masato Ishino ◽  
Yasushi Matsui
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Laser Diodes ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Laser ◽  
Multi Quantum Well
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