Controlling Er–Tm interaction in Er and Tm codoped silicon-rich silicon oxide using nanometer-scale spatial separation for efficient, broadband infrared luminescence

ABSTRACTA new measurement technique using a cantilever probe with an integrated thermal sensor is investigated for measuring thermal conductivity at the nanometer scale. The probe is used in a configuration wherein the laser from an atomic force microscope (AFM) heats the tip of the probe above ambient temperature. Heat is transferred from the probe to a sample based on the thermal conductivity of the sample. The heat flow creates a temperature change, as small as 0.01 °C, which is detected by the thermal sensor. The measurement technique presented offers a simple and effective method for mapping the thermal conductivity of a number of materials. We explore the ability of the technique to map silicon oxide on silicon, carbon fibers and gold nanoparticles. Analysis shows that the technique can be used to produce images with a thermal resolution surpassing 25 nm.

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The study of nickel-induced enhancement of near-infrared luminescence in Si-rich silicon oxide films

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2009.01.004 ◽

2009 ◽

Vol 41 (5) ◽

pp. 812-816 ◽

Cited By ~ 2

Author(s):

D.X. Li ◽

Y. He ◽

J.Y. Feng

Keyword(s):

Near Infrared ◽

Silicon Oxide ◽

Oxide Films ◽

Infrared Luminescence

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Versatile thiol-based reactions for micrometer- and nanometer-scale photopatterning of polymers and biomolecules

Journal of Materials Chemistry B ◽

10.1039/c5tb00345h ◽

2015 ◽

Vol 3 (21) ◽

pp. 4431-4438 ◽

Cited By ~ 9

Author(s):

Florian H. Mostegel ◽

Robert E. Ducker ◽

Paul H. Rieger ◽

Osama El Zubir ◽

Sijing Xia ◽

...

Keyword(s):

Green Fluorescent Protein ◽

Polymer Brushes ◽

Silicon Oxide ◽

Fluorescent Protein ◽

Nanometer Scale ◽

Oxide Surfaces ◽

Green Fluorescent

Thiol-based reactions were applied to enable the photochemical patterning of polymer brushes and green fluorescent protein on silicon oxide surfaces.

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Infrared luminescence of erbium-silicon-oxide crystalline compound on silicon

2012 IEEE 3rd International Conference on Photonics ◽

10.1109/icp.2012.6379863 ◽

2012 ◽

Author(s):

T. Ishiyama ◽

M. Higuchi ◽

T. Obata ◽

Y. Kamiura

Keyword(s):

Silicon Oxide ◽

Crystalline Compound ◽

Infrared Luminescence

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Spatial separation mechanism in Si quantum dots deposited by chemical vapour deposition on SiO2

MRS Proceedings ◽

10.1557/proc-788-l12.2 ◽

2003 ◽

Vol 788 ◽

Author(s):

Rosaria A. Puglisi ◽

Giuseppe Nicotra ◽

Salvatore Lombardo ◽

Corrado Spinella ◽

Cosimo Gerardi

Keyword(s):

Silicon Oxide ◽

Chemical Vapour ◽

Spatial Separation ◽

Separation Mechanism ◽

Transmission Electron ◽

Oxide Substrates ◽

Average Size ◽

New Si ◽

Region Size ◽

Si Quantum Dots

ABSTRACTA systematic study on the Si inter-dot distance after nucleation on silicon oxide substrates is presented. The process has been followed from the very early stages of the dot formation up to 25% of coverages. Structural characterization has been performed by means of energy filtered transmission electron microscopy, which allowed us to observe dot sizes down to 0.5 nm in radius. Silicon nanodots are shown to be surrounded by a depleted zone, where no new Si dots are observed to nucleate. The average size of such a zone ranges between 4 and 9 nm, depending on the deposition conditions. The dot radius is shown to be proportional to the depleted region size, thus indicating the scaling behaviour of the process.

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