Growth of highly oriented HfO2 thin films of monoclinic phase on yttrium-stabilized ZrO2 and Si substrates by pulsed-laser deposition

ABSTRACTStructural and electronic transport properties of polycrystalline ZnO thin films, prepared by pulsed laser deposition, have been investigated. The films were deposited on glass and Si3N4/Si substrates using O2 and N2 atmospheres. X-ray analysis revealed preferential c-axis orientation perpendicular to the sample substrate. Films deposited under relatively high O2 pressure were highly resistive. However, the conductivity σ increased while the films were irradiated with ultraviolet light, showing an Arrhenius (In σ ∝ T-1) dependence as a function of temperature. The ZnO film deposited in N2 atmosphere exhibited at room temperature a resistivity ∼ 1 Ω cm, and a sheet carrier concentration ∼ 5 1012 cm-2. The variation of the conductivity with temperature, in the range 60 – 150 K, follows a In σ ∝ T-1/4 dependence characteristic of variable range hopping. An analysis of the experimental results of conductivity as a function of temperature, in terms of possible doping effects, as well as conduction mechanisms is presented.

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Comparison of ZnO thin films grown by pulsed laser deposition on sapphire and Si substrates

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2007.09.135 ◽

2008 ◽

Vol 40 (3) ◽

pp. 699-704 ◽

Cited By ~ 17

Author(s):

L. Han ◽

F. Mei ◽

C. Liu ◽

C. Pedro ◽

E. Alves

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Si Substrates

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Deposition and dielectric properties of CaCu3Ti4O12 thin films on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition

Thin Solid Films ◽

10.1016/s0040-6090(03)00825-3 ◽

2003 ◽

Vol 440 (1-2) ◽

pp. 60-65 ◽

Cited By ~ 67

Author(s):

Liang Fang ◽

Mingrong Shen

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Si Substrates

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TOF SIMS induced artificial topographical effects on the Y2(Al,Ga)5O12:Tb3+ thin films deposited on Si substrates by the pulsed laser deposition technique

Applied Surface Science ◽

10.1016/j.apsusc.2014.06.016 ◽

2014 ◽

Vol 313 ◽

pp. 524-531 ◽

Cited By ~ 4

Author(s):

A. Yousif ◽

R.M. Jafer ◽

J.J. Terblans ◽

O.M. Ntwaeaborwa ◽

M.M. Duvenhage ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Si Substrates ◽

Tof Sims ◽

Topographical Effects

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ROUGHNESS AND STRUCTURE OF InGaAsN THIN FILMS ON Si

Physical and Chemical Aspects of the Study of Clusters Nanostructures and Nanomaterials ◽

10.26456/pcascnn/2021.13.106 ◽

2021 ◽

pp. 106-114

Author(s):

Олег Васильевич Девицкий

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Root Mean Square ◽

Pulsed Laser ◽

Laser Deposition ◽

Root Mean Square Roughness ◽

Mean Square ◽

Force Microscopy ◽

Si Substrates ◽

Nitrogen Mixture

Методом импульсного лазерного напыления в атмосфере аргоно-азотной газовой смеси из мишени InGaAs впервые были получены тонкие пленки InGaAsN на подложках GaAs и Si. Мишень lnGaAs формировалась методом одноосного прессования из порошков GaAs и lnAs. Методами атомно силовой микроскопии и рентгеновской дифракции исследованы морфология поверхности и структура данных тонких пленок. Показано, что пленки InGaAsN на Si имеют средний размер кристалла 0,93 нм, а пленки и InGaAsN на GaAs - 0,99 нм. Определено, что уменьшение давления аргоно-азотной смеси при импульсном лазерном напылении тонких пленок InGaAsN на подложках GaAs и Si приводит к снижению значения среднеквадратичной шероховатости поверхности. Наименьшую среднеквадратическую шероховатость равную 0,25 нм имела тонкая пленка InGaAsN на подложке GaAs, полученная в вакууме, наибольшую среднеквадратическую шероховатость имела тонкая пленка InGaAsN на подложке Si, полученная при давления аргоно-азотной смеси от 10 Па - 19,37 нм. By the method of pulsed laser deposition in atmosphere of an argon-nitrogen gas mixture, for the first time thin InGaAsN films on GaAs and Si substrates were obtained from the InGaAs target. The InGaAs target was formed by uniaxial pressing from GaAs and InAs powders. The surface morphology and structure of these thin films are studied by atomic force microscopy and X-ray diffraction. It is shown that InGaAsN films on Si have an average crystal size of 0,93 nm, and InGaAsN films on GaAs of 0,99 nm. It is determined that a decrease in the pressure of an argon-nitrogen mixture during pulsed laser deposition of thin InGaAsN films on GaAs and Si substrates leads to a decrease in the value of the root- mean-square roughness of the surface. The smallest root-mean-square roughness equal to 0,25 nm had a thin InGaAsN film on a GaAs substrate obtained in vacuum, the largest root-mean- square roughness of 19,37 nm had a thin InGaAsN film on a Si substrate obtained at the argon-nitrogen mixture pressure of 10 Pa -.

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Influence of stress on structural and dielectric anomaly of Bi2(Zn1/3Ta2/3)207 thin films

MRS Proceedings ◽

10.1557/proc-875-o12.15 ◽

2005 ◽

Vol 875 ◽

Author(s):

Jun Hong Noh ◽

Hee Bum Hong ◽

Kug Sun Hong

Keyword(s):

Thin Films ◽

Residual Stress ◽

Interfacial Layer ◽

Monoclinic Phase ◽

Lattice Mismatch ◽

Pulsed Laser ◽

Dielectric Anomaly ◽

Laser Deposition ◽

Cubic Phase ◽

Si Substrates

AbstractBi2(Zn1/3Ta2/3)2O7 (BZT) thin films were grown on the (111) oriented Pt/TiOx/SiO2/Si substrates using a pulsed laser deposition (PLD) technique. BZT thin films deposited at an oxygen partial pressure of 400 mTorr have the non-stoichiometric anomalous cubic phase despite the BZT target was the monoclinic phase. Compositions, the lattice mismatch, the interfacial layer and the residual stress in the film were investigated as the factors which may affect the formation of the anomalous cubic phase. Among them, the coherent interfacial layer which formed at high oxygen pressures resulted in the formation of the cubic phase by reducing the internal stress.

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ZrC Thin Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-780-y3.13 ◽

2003 ◽

Vol 780 ◽

Author(s):

V. Craciun ◽

D. Craciun ◽

J. M. Howard ◽

R. K. Singh

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Photoelectron Spectroscopy ◽

Pulsed Laser ◽

Surface Region ◽

Laser Deposition ◽

X Ray Diffraction ◽

X Ray ◽

Si Substrates ◽

Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

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Pulsed Laser Deposition of Collagen Thin Films

MRS Proceedings ◽

10.1557/proc-414-65 ◽

1995 ◽

Vol 414 ◽

Cited By ~ 1

Author(s):

J. A. Conklin ◽

C. M. Cotell ◽

T. W. Barnett ◽

D. C. Hansen

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Helical Structure ◽

Film Deposition ◽

Laser Deposition ◽

X Ray Diffraction ◽

Deposition Parameter ◽

Si Substrates ◽

Vapor Quenching

AbstractThin films of collagen were prepared by pulsed laser deposition (PLD) at room temperature on Si substrates using a KrF laser (248 nm) over a fluence range from 0.2–1.5 Jcm-2. The effects on film composition and morphology of ambient gas (Ar, Ar/H2O vapor), quenching atmosphere (Ar, Ar/H2O vapor), and fluence were examined. Fourier transform infrared spectroscopy (FT- IR) demonstrated that, independent of deposition parameter, the PLD films contained the characteristic Amide I and II functionalities of the collagen target and indicated that the secondary structure was altered by the PLD process. The surface morphology of the films was a function of the laser fluence and the gas environment during either film deposition or quenching at the end of deposition. Preliminary gel electrophoresis examination of deposited films suggested the collagen had not maintained the triple helical structure of the native collagen. X-Ray diffraction (XRD) indicated that all of the films, deposited under any conditions, were predominantly amorphous.

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