Microwave characterization of submicrometer-sized nickel hollow sphere composites

2006 ◽  
Vol 100 (1) ◽  
pp. 014304 ◽  
Author(s):  
Yida Deng ◽  
Ling Zhao ◽  
Bin Shen ◽  
Lei Liu ◽  
Wenbin Hu
Keyword(s):  
Hollow Sphere ◽  
Microwave Characterization

WGM DIELECTRIC RESONATOR WITH CAPILLARY FOR MICROWAVE CHARACTERIZATION OF LIQUIDS

2019 ◽  
Vol 78 (18) ◽  
pp. 1651-1657
Author(s):  
Alexey Gubin ◽  
A. A. Lavrinovich ◽  
I. А. Protsenko ◽  
A. A. Barannik ◽  
S. Vitusevich
Keyword(s):  
Dielectric Resonator ◽  
Microwave Characterization

Microwave Characterization of Nickel

PIERS Online ◽  
2008 ◽  
Vol 4 (6) ◽  
pp. 686-690 ◽  
Author(s):  
Stepan Lucyszyn
Keyword(s):  
Microwave Characterization

scholarly journals Microwave Characterization of Conductive PLA and its Application to a 12 to 18 GHz 3-D Printed Rotary Vane Attenuator

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Enrique Marquez-Segura ◽  
Sang-Hee Shin ◽  
Attique Dawood ◽  
Nick Ridler ◽  
Stepan Lucyszyn
Keyword(s):  
Microwave Characterization

Microwave characterization of undoped polycrystalline silicon

2006 ◽  
Vol 35 (6) ◽  
pp. 350-353
Author(s):  
P. A. Borodovskii ◽  
A. F. Buldygin ◽  
A. T. Drofa ◽  
A. S. Tokarev
Keyword(s):  
Polycrystalline Silicon ◽  
Microwave Characterization

Thermal and microwave characterization of GaAs to Si metal-bonded structures

2013 ◽  
Vol 114 (12) ◽  
pp. 123515
Author(s):  
Justin R. Bickford ◽  
P. K. L. Yu ◽  
S. S. Lau
Keyword(s):  
Microwave Characterization

High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transmission Lines ◽  
High Power ◽  
High Speed ◽  
Signal Transmission ◽  
Mesa Structure ◽  
Microwave Characterization ◽  
Absorbing Layer ◽  
Analog Transmission

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

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