Nanosilicon dot arrays with a bit pitch and a track pitch of 25nm formed by electron-beam drawing and reactive ion etching for 1Tbit∕in.2 storage

Applied Physics Letters ◽

10.1063/1.2400102 ◽

2006 ◽

Vol 89 (22) ◽

pp. 223131 ◽

Author(s):

Sumio Hosaka ◽

Hirotaka Sano ◽

Masumi Shirai ◽

Hayato Sone

Keyword(s):

Electron Beam ◽

Reactive Ion Etching ◽

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