Consequences of nonstochiometric SiOx interfacial layers on the electrical characterization of metal-oxide-semiconductor devices

Journal of Applied Physics ◽

10.1063/1.2433998 ◽

2007 ◽

Vol 101 (3) ◽

pp. 034509

Author(s):

J. S. de Sousa ◽

P. F. R. Leite ◽

E. L. de Oliveira ◽

V. N. Freire ◽

G. A. Farias

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interfacial Layers

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Nanoscale electrical characterization of Si-nc based memory metal-oxide-semiconductor devices

Journal of Applied Physics ◽

10.1063/1.2433749 ◽

2007 ◽

Vol 101 (6) ◽

pp. 064509 ◽

Author(s):

M. Porti ◽

M. Avidano ◽

M. Nafría ◽

X. Aymerich ◽

J. Carreras ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices

Applied Physics Letters ◽

10.1063/1.3139772 ◽

2009 ◽

Vol 94 (20) ◽

pp. 202108 ◽

Author(s):

L. K. Chu ◽

T. D. Lin ◽

M. L. Huang ◽

R. L. Chu ◽

C. C. Chang ◽

...

Keyword(s):

Metal Oxide ◽

Energy Band ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interfacial Layers

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Annealing condition optimization and electrical characterization of amorphous LaAlO3∕GaAs metal-oxide-semiconductor capacitors

Applied Physics Letters ◽

10.1063/1.2748308 ◽

2007 ◽

Vol 90 (24) ◽

pp. 243505 ◽

Author(s):

Donghun Choi ◽

James S. Harris ◽

Maitri Warusawithana ◽

Darrell G. Schlom

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Annealing Condition ◽

Condition Optimization

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Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc[sub 2]O[sub 3] as the Gate Oxide

Electrochemical and Solid-State Letters ◽

10.1149/1.1479298 ◽

2002 ◽

Vol 5 (7) ◽

pp. G51 ◽

Author(s):

R. Mehandru ◽

B. P. Gila ◽

J. Kim ◽

J. W. Johnson ◽

K. P. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Diode

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Electrical characterization of deoxyribonucleic acid hybridization in metal-oxide-semiconductor-like structures

Applied Physics Letters ◽

10.1063/1.4747452 ◽

2012 ◽

Vol 101 (9) ◽

pp. 093703 ◽

Author(s):

S. Libertino ◽

G. Cannella ◽

V. Aiello ◽

A. Busacca ◽

S. Lombardo

Keyword(s):

Metal Oxide ◽

Deoxyribonucleic Acid ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments

IEEE Electron Device Letters ◽

10.1109/led.2011.2128853 ◽

2011 ◽

Vol 32 (6) ◽

pp. 752-754 ◽

Author(s):

H. D. Trinh ◽

G. Brammertz ◽

E. Y. Chang ◽

C. I. Kuo ◽

C. Y. Lu ◽

...

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Surface Treatments ◽

Oxide Semiconductor

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Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/aba38b ◽

2020 ◽

Vol 53 (44) ◽

pp. 445102

Author(s):

Dongyuan Zhai ◽

Dan Gao ◽

Jing Xiao ◽

Xiaoliang Gong ◽

Jin Yang ◽

...

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps

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Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2680 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2680-2683 ◽

Author(s):

Yan-Li Pei ◽

Takafumi Fukushima ◽

Tetsu Tanaka ◽

Mitsumasa Koyanagi

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

Memory Devices ◽

Semiconductor Memory ◽

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Strain and electrical characterization of metal-oxide-semiconductor field-effect transistor fabricated on mechanically and thermally transferred silicon on insulator films

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1819926 ◽

2004 ◽

Vol 22 (6) ◽

pp. 2691 ◽

Author(s):

F. Lu ◽

J. Bickford ◽

C. Novotny ◽

P. K. L. Yu ◽

S. S. Lau ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor

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Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method

Thin Solid Films ◽

10.1016/j.tsf.2011.10.175 ◽

2012 ◽

Vol 520 (8) ◽

pp. 3232-3235 ◽

Author(s):

K. Minami ◽

Y. Nakamura ◽

S. Yamasaka ◽

O. Yoshitake ◽

J. Kikkawa ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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