scholarly journals Determination of solid phase chemical diffusion coefficient and density of states by electrochemical methods: Application to iridium oxide-based thin films

2008 ◽  
Vol 103 (2) ◽  
pp. 023702 ◽  
Author(s):  
Jonas Backholm ◽  
Peter Georén ◽  
Gunnar A. Niklasson
Keyword(s):  
Thin Films ◽  
Diffusion Coefficient ◽  
Density Of States ◽  
Solid Phase ◽  
Chemical Diffusion ◽  
Iridium Oxide ◽  
Electrochemical Methods ◽  
Chemical Diffusion Coefficient ◽  
Phase Chemical

Oxidation Kinetics of Nitrogen Doped TiO2-δ Thin Films: Analysis on the Basis of Oxygen Activity Dependence of the Chemical Diffusion Coefficient

2018 ◽  
Vol 383 ◽  
pp. 147-152
Author(s):  
Misha Sinder ◽  
Jian Min Shi ◽  
Klaus Dieter Becker
Keyword(s):  
Thin Films ◽  
Diffusion Coefficient ◽  
Electron Concentration ◽  
Chemical Diffusion ◽  
Oxygen Activity ◽  
Chemical Diffusion Coefficient ◽  
Recombination Reaction ◽  
Nitrogen Doped ◽  
Pressure Profiles ◽  
Concentration Step

The model explaining the occurrence of the electron concentration step front during oxidation of nitrogen-doped TiO2-δ thin films is presented. This model is based on ambipolar chemical diffusion coefficient analysis, for which immobile and uniformly distributed nitrogen component is assumed. The diffusion species and oxygen activity (pressure) profiles are obtained by numerical and approximate analytical simulation of the chemical diffusion. The profiles indicate the presence of two separate singularities: the electron concentration step front, and the electron-hole recombination reaction front. The electron concentration step front relates to the singularity of the ambipolar diffusion of three types of charged species with essentially different diffusion coefficients.

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