Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

Journal of Applied Physics ◽

10.1063/1.3267299 ◽

2009 ◽

Vol 106 (11) ◽

pp. 114107 ◽

Author(s):

D. Hoogeland ◽

K. B. Jinesh ◽

F. Roozeboom ◽

W. F. A. Besling ◽

M. C. M. van de Sanden ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Metal Oxide Semiconductor Capacitor

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Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process

Applied Physics Letters ◽

10.1063/1.1762977 ◽

2004 ◽

Vol 84 (25) ◽

pp. 5097-5099 ◽

Author(s):

Y. Xuan ◽

D. Hojo ◽

T. Yasuda

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Deposition Process ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hafnium Silicate ◽

Layer Deposition ◽

Metal Oxide Semiconductor Capacitor ◽

Deposition Mode

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The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Applied Physics Letters ◽

10.1063/1.3467813 ◽

2010 ◽

Vol 97 (4) ◽

pp. 042903 ◽

Author(s):

H. D. Trinh ◽

E. Y. Chang ◽

P. W. Wu ◽

Y. Y. Wong ◽

C. T. Chang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Surface Treatment ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Annealing Conditions ◽

Layer Deposition ◽

Metal Oxide Semiconductor Capacitor

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Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

Journal of Applied Physics ◽

10.1063/1.3428492 ◽

2010 ◽

Vol 107 (10) ◽

pp. 106104 ◽

Author(s):

D. Gregušová ◽

R. Stoklas ◽

Ch. Mizue ◽

Y. Hori ◽

J. Novák ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Trap States ◽

Semiconductor Structures ◽

Layer Deposition

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TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Layer Deposition

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Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Applied Physics Letters ◽

10.1063/1.3007978 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193504 ◽

Author(s):

Rahul Suri ◽

Bongmook Lee ◽

Daniel J. Lichtenwalner ◽

Nivedita Biswas ◽

Veena Misra

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Layer Deposition

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GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization

Applied Physics Letters ◽

10.1063/1.2806190 ◽

2007 ◽

Vol 91 (19) ◽

pp. 193503 ◽

Author(s):

D. Shahrjerdi ◽

D. I. Garcia-Gutierrez ◽

T. Akyol ◽

S. R. Bank ◽

E. Tutuc ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Fabrication And Characterization

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition

Applied Physics Letters ◽

10.1063/1.1954902 ◽

2005 ◽

Vol 87 (1) ◽

pp. 013501 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

E. E. Tois ◽

Jian Jim Wang

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nanometer Scale ◽

Semiconductor Structures ◽

Layer Deposition

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Effect of annealing ambient and temperature on the electrical characteristics of atomic layer deposition Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and MOSFETs

Journal of Applied Physics ◽

10.1063/1.3686628 ◽

2012 ◽

Vol 111 (4) ◽

pp. 044105 ◽

Author(s):

Jenny Hu ◽

H.-S. Philip Wong

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Layer Deposition

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