Epitaxial growth of silicon at low temperature by ultrahigh vacuum electron cyclotron resonance plasma chemical vapor deposition
Low‐Temperature Si Epitaxial Growth by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
1992 ◽
Vol 139
(7)
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pp. 1983-1988
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1999 ◽
Vol 38
(Part 1, No. 4B)
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pp. 2200-2204
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1996 ◽
Vol 35
(Part 1, No. 9B)
◽
pp. 5089-5093
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Radical Fluxes in Electron Cyclotron Resonance Plasma Chemical Vapor Deposition of Amorphous Silicon
1995 ◽
Vol 34
(Part 1, No. 11)
◽
pp. 5965-5970
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1997 ◽
Vol 36
(Part 2, No. 8A)
◽
pp. L986-L988