Current-induced degradation of high performance deep ultraviolet light emitting diodes

Applied Physics Letters ◽

10.1063/1.3435485 ◽

2010 ◽

Vol 96 (21) ◽

pp. 213512 ◽

Author(s):

Craig G. Moe ◽

Meredith L. Reed ◽

Gregory A. Garrett ◽

Anand V. Sampath ◽

Troy Alexander ◽

...

Keyword(s):

Ultraviolet Light ◽

High Performance ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Direct Growth of 5 in. Uniform Hexagonal Boron Nitride on Glass for High-Performance Deep-Ultraviolet Light-Emitting Diodes

Advanced Materials Interfaces ◽

10.1002/admi.201800662 ◽

2018 ◽

Vol 5 (18) ◽

pp. 1800662 ◽

Author(s):

Qiucheng Li ◽

Qingqing Wu ◽

Jing Gao ◽

Tongbo Wei ◽

Jingyu Sun ◽

...

Keyword(s):

Boron Nitride ◽

Ultraviolet Light ◽

High Performance ◽

Light Emitting Diodes ◽

Hexagonal Boron Nitride ◽

Light Emitting ◽

Direct Growth ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

Optics Letters ◽

10.1364/ol.400917 ◽

2020 ◽

Vol 45 (18) ◽

pp. 5125

Author(s):

Ravi Teja Velpula ◽

Barsha Jain ◽

Swetha Velpula ◽

Hoang-Duy Nguyen ◽

Hieu Pham Trung Nguyen

Keyword(s):

Ultraviolet Light ◽

High Performance ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Barrier Structure ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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High-performance AlGaN-based deep ultraviolet light-emitting diodes with different types of InAlGaN/AlGaN electron blocking layer

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ac17de ◽

2021 ◽

Author(s):

Peng Du ◽

Lang Shi ◽

Sheng Liu ◽

Shengjun Zhou

Keyword(s):

Ultraviolet Light ◽

High Performance ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Different Types ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers

Applied Physics Letters ◽

10.1063/1.5093160 ◽

2019 ◽

Vol 114 (17) ◽

pp. 172105 ◽

Author(s):

J. Lang ◽

F. J. Xu ◽

W. K. Ge ◽

B. Y. Liu ◽

N. Zhang ◽

...

Keyword(s):

Ultraviolet Light ◽

High Performance ◽

Carrier Transport ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions

Applied Physics Express ◽

10.35848/1882-0786/abb86f ◽

2020 ◽

Vol 13 (10) ◽

pp. 102005 ◽

Author(s):

Ryota Ishii ◽

Akira Yoshikawa ◽

Kazuhiro Nagase ◽

Mitsuru Funato ◽

Yoichi Kawakami

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Selective Excitation ◽

Photoluminescence Spectroscopy ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes ◽

Excitation Conditions

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Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.200903400 ◽

2010 ◽

Vol 4 (1-2) ◽

pp. 49-51 ◽

Author(s):

Yitao Liao ◽

Christos Thomidis ◽

Chen-kai Kao ◽

Adam Moldawer ◽

Wei Zhang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Ultraviolet Light ◽

Molecular Beam ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

IEEE Photonics Journal ◽

10.1109/jphot.2020.3047846 ◽

2021 ◽

Vol 13 (1) ◽

pp. 1-8

Author(s):

J. Lang ◽

F. J. Xu ◽

Y. H. Sun ◽

N. Zhang ◽

J. M. Wang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Velocity Modulation ◽

Deep Ultraviolet ◽

Carrier Velocity ◽

Ultraviolet Light Emitting Diodes

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Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Optik ◽

10.1016/j.ijleo.2021.166528 ◽

2021 ◽

Vol 232 ◽

pp. 166528

Author(s):

Muhammad Usman ◽

Tariq Jamil ◽

Shahzeb Malik ◽

Habibullah Jamal

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Electrical determination of current injection and internal quantum efficiencies in AlGaN-based deep-ultraviolet light-emitting diodes

Optics Express ◽

10.1364/oe.25.00a639 ◽

2017 ◽

Vol 25 (16) ◽

pp. A639 ◽

Author(s):

Guo-Dong Hao ◽

Naoki Tamari ◽

Toshiyuki Obata ◽

Toru Kinoshita ◽

Shin-ichiro Inoue

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Current Injection ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.05.010 ◽

2015 ◽

Vol 85 ◽

pp. 59-66 ◽

Author(s):

Pai Sun ◽

Xianglong Bao ◽

Songqing Liu ◽

Chunya Ye ◽

Zhaorong Yuan ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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