Stability of electrical properties of nitrogen‐rich, silicon‐rich, and stoichiometric silicon nitride films

1989 ◽  
Vol 66 (6) ◽  
pp. 2765-2767 ◽  
Author(s):  
W. S. Lau ◽  
S. J. Fonash ◽  
J. Kanicki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Silicon Nitride Films

Electrical properties of silicon nitride films plasma‐deposited from SiF4, N2, and H2 source gases

1985 ◽  
Vol 57 (2) ◽  
pp. 426-431 ◽  
Author(s):  
Shizuo Fujita ◽  
Toshiyuki Ohishi ◽  
Hideo Toyoshima ◽  
Akio Sasaki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Silicon Nitride Films

Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

1986 ◽  
Vol 68 ◽  
Author(s):  
Nancy Voke ◽  
Jerzy Kanicki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Optical And Electrical Properties ◽  
Amorphous Silicon Nitride ◽  
Full Characterization ◽  
Silicon Nitride Films ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia

1993 ◽  
Vol 32 (Part 1, No. 12B) ◽  
pp. 6132-6136 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Tetsuya Ohtsuki ◽  
Kenji Takubo ◽  
Michio Komoda ◽  
Hiroyuki Matsunami
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nitride Films
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