Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride

2011 ◽  
Vol 109 (3) ◽  
pp. 034105 ◽  
Author(s):  
Johannes Seiffe ◽  
Luca Gautero ◽  
Marc Hofmann ◽  
Jochen Rentsch ◽  
Ralf Preu ◽  
...  
2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744101 ◽  
Author(s):  
Bitao Chen ◽  
Yingke Zhang ◽  
Qiuping Ouyang ◽  
Fei Chen ◽  
Xinghua Zhan ◽  
...  

SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.


2014 ◽  
Vol 116 (5) ◽  
pp. 054507 ◽  
Author(s):  
Saskia Kühnhold ◽  
Pierre Saint-Cast ◽  
Bishal Kafle ◽  
Marc Hofmann ◽  
Francesco Colonna ◽  
...  

2011 ◽  
Vol 98 (15) ◽  
pp. 153514 ◽  
Author(s):  
Jan-Willem A. Schüttauf ◽  
Karine H. M. van der Werf ◽  
Inge M. Kielen ◽  
Wilfried G. J. H. M. van Sark ◽  
Jatindra K. Rath ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document