Study of defects induced by high‐electric‐field stress into a thin gate oxide (11 nm) of metal‐oxide‐semiconductor capacitors
Keyword(s):
2007 ◽
Vol 353
(2)
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pp. 170-179
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Keyword(s):
Keyword(s):
Keyword(s):
1998 ◽
Vol 37
(Part 2, No. 1A/B)
◽
pp. L1-L3
Keyword(s):
2007 ◽
Vol 51
(4)
◽
pp. 627-632
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