Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate

2011 ◽  
Vol 98 (19) ◽  
pp. 191903 ◽  
Author(s):  
T. J. Prosa ◽  
P. H. Clifton ◽  
H. Zhong ◽  
A. Tyagi ◽  
R. Shivaraman ◽  
...  
2007 ◽  
Vol 13 (S02) ◽  
Author(s):  
A Cerezo ◽  
L Chang ◽  
P Clifton ◽  
M Galtrey ◽  
S Gerstl ◽  
...  

2008 ◽  
Vol 104 (1) ◽  
pp. 013524 ◽  
Author(s):  
M. J. Galtrey ◽  
R. A. Oliver ◽  
M. J. Kappers ◽  
C. J. Humphreys ◽  
P. H. Clifton ◽  
...  

1987 ◽  
Vol 48 (C6) ◽  
pp. C6-349-C6-354
Author(s):  
K. Hono ◽  
T. Sakurai ◽  
H. W. Pickering

1988 ◽  
Vol 49 (C6) ◽  
pp. C6-299-C6-304 ◽  
Author(s):  
U. ROLANDER ◽  
H.-O. ANDRÉN

1988 ◽  
Vol 49 (C6) ◽  
pp. C6-81-C6-86
Author(s):  
M. K. MILLER ◽  
K. F. RUSSELL

1986 ◽  
Vol 176 (1-2) ◽  
pp. A554
Author(s):  
Kenji Murakami ◽  
Toshiyuki Adachi ◽  
Tsukasa Kuroda ◽  
Shogo Nakamura

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