Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
1989 ◽
Vol 50
(C8)
◽
pp. C8-437-C8-442
◽
Keyword(s):
Keyword(s):
1986 ◽
Vol 47
(C2)
◽
pp. C2-415-C2-424
◽
Keyword(s):
1984 ◽
Vol 45
(C9)
◽
pp. C9-477-C9-481
1987 ◽
Vol 48
(C6)
◽
pp. C6-349-C6-354
1988 ◽
Vol 49
(C6)
◽
pp. C6-299-C6-304
◽