Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.3595309 ◽

2011 ◽

Vol 98 (22) ◽

pp. 222503 ◽

Author(s):

L. Plucinski ◽

G. Mussler ◽

J. Krumrain ◽

A. Herdt ◽

S. Suga ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electronic Properties ◽

Topological Insulators ◽

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Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Journal of Applied Physics ◽

10.1063/1.3415527 ◽

2010 ◽

Vol 107 (10) ◽

pp. 103701 ◽

Author(s):

H. Tang ◽

Z. Q. Fang ◽

S. Rolfe ◽

J. A. Bardwell ◽

S. Raymond

Keyword(s):

Molecular Beam Epitaxy ◽

Electronic Properties ◽

Growth Kinetics ◽

Molecular Beam ◽

High Resistivity

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Structural and electronic properties of GaAs : C and AlxGa1-xAs : C grown by solid-source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90720-h ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 724-727 ◽

Author(s):

C. Giannini ◽

O. Brandt ◽

A. Fischer ◽

K.H. Ploog ◽

L. Tapfer

Keyword(s):

Molecular Beam Epitaxy ◽

Electronic Properties ◽

Molecular Beam ◽

Structural And Electronic Properties

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Optical and Electronic Properties of Symmetric InAs/(In,Al,Ga)As/InP Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters

Physical Review Applied ◽

10.1103/physrevapplied.14.064054 ◽

2020 ◽

Vol 14 (6) ◽

Author(s):

P. Holewa ◽

M. Gawełczyk ◽

A. Maryński ◽

P. Wyborski ◽

J.P. Reithmaier ◽

...

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Electronic Properties ◽

Molecular Beam ◽

Single Photon ◽

Potential System ◽

Optical And Electronic Properties ◽

Inp Quantum Dots

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Publisher’s Note: “Effect of in-situ oxygen on the electronic properties of graphene grown by carbon molecular beam epitaxy” [Appl. Phys. Lett. 100, 133107 (2012)]

Applied Physics Letters ◽

10.1063/1.4730980 ◽

2012 ◽

Vol 100 (25) ◽

pp. 259902 ◽

Author(s):

Jeongho Park ◽

W. C. Mitchel ◽

Said Elhamri ◽

Tyson C. Back

Keyword(s):

Molecular Beam Epitaxy ◽

Electronic Properties ◽

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Atomic-scale characterization and control of semiconductor interfaces grown by molecular beam epitaxy: interface roughness and optical and electronic properties

Materials Science and Engineering B ◽

10.1016/0921-5107(92)90313-x ◽

1992 ◽

Vol 14 (3) ◽

pp. 304-310 ◽

Author(s):

M Tanaka ◽

T Noda ◽

H Sakaki

Keyword(s):

Molecular Beam Epitaxy ◽

Electronic Properties ◽

Molecular Beam ◽

Interface Roughness ◽

Atomic Scale ◽

Semiconductor Interfaces ◽

Optical And Electronic Properties ◽

Scale Characterization ◽

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Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1868863 ◽

2005 ◽

Vol 86 (8) ◽

pp. 083507 ◽

Author(s):

O. Weidemann ◽

E. Monroy ◽

E. Hahn ◽

M. Stutzmann ◽

M. Eickhoff

Keyword(s):

Molecular Beam Epitaxy ◽

Electronic Properties ◽

Thermal Oxidation ◽

Molecular Beam ◽

Schottky Contacts

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Scanning Tunneling Microscopy Studies of Topological Insulators Grown by Molecular Beam Epitaxy

EPJ Web of Conferences ◽

10.1051/epjconf/20122300020 ◽

2012 ◽

Vol 23 ◽

pp. 00020

Author(s):

Xi Chen ◽

Ke He ◽

Xucun Ma ◽

Qikun Xue

Keyword(s):

Molecular Beam Epitaxy ◽

Scanning Tunneling Microscopy ◽

Topological Insulators ◽

Molecular Beam ◽

Scanning Tunneling ◽

Tunneling Microscopy

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The growth and electronic properties of α-Sn thin films grown on InSb(100) and () substrates by molecular beam epitaxy (MBE)

Journal of Crystal Growth ◽

10.1016/0022-0248(91)91112-n ◽

1991 ◽

Vol 111 (1-4) ◽

pp. 943-947 ◽

Author(s):

W.T. Yuen ◽

W.K. Liu ◽

R.A. Stradling ◽

B.A. Joyce

Keyword(s):

Molecular Beam Epitaxy ◽

Electronic Properties ◽

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Intrinsic ultrathin topological insulators grown via molecular beam epitaxy characterized by in-situ angle resolved photoemission spectroscopy

Applied Physics Letters ◽

10.1063/1.4733317 ◽

2012 ◽

Vol 101 (1) ◽

pp. 013118 ◽

Author(s):

J. J. Lee ◽

F. T. Schmitt ◽

R. G. Moore ◽

I. M. Vishik ◽

Y. Ma ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Topological Insulators ◽

Molecular Beam ◽

Photoemission Spectroscopy ◽

Angle Resolved Photoemission Spectroscopy

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Morphology and electronic properties of metal organic molecular beam epitaxy grown ZnO on hydrogen passivated 6H-SiC(0001)

Journal of Applied Physics ◽

10.1063/1.2924405 ◽

2008 ◽

Vol 103 (10) ◽

pp. 103720 ◽

Author(s):

Stefan Andres ◽

Christian Pettenkofer ◽

Florian Speck ◽

Thomas Seyller

Keyword(s):

Molecular Beam Epitaxy ◽

Electronic Properties ◽

Molecular Beam ◽

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