The significance of in situ conditions in the characterization of GaSb nanopatterned surfaces via ion beam sputtering

Correction for ‘Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering’ by Dong-Jin Yun et al., Phys. Chem. Chem. Phys., 2018, 20, 615–622.

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Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071053 ◽

1973 ◽

Vol 31 ◽

pp. 122-123

Author(s):

J. S. Maa ◽

Thos. E. Hutchinson

Keyword(s):

Epitaxial Growth ◽

Film Growth ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Microscopy Technique ◽

Direct Observations ◽

In Situ Electron Microscopy ◽

Beam Sputtering ◽

The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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In-situ epitaxial growth study of Bi/sub 2/(Sr,Ca)/sub 3/Cu/sub 2/O/sub x/ films by ion beam sputtering on cleaved MgO substrates

IEEE Transactions on Magnetics ◽

10.1109/20.133402 ◽

1991 ◽

Vol 27 (2) ◽

pp. 1205-1210 ◽

Cited By ~ 14

Author(s):

J. Fujita ◽

T. Yoshitake ◽

T. Satoh ◽

T. Ichihashi ◽

H. Igarashi

Keyword(s):

Epitaxial Growth ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Growth Study ◽

Beam Sputtering

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Direct comparative study on the energy level alignments in unoccupied/occupied states of organic semiconductor/electrode interface by constructing in-situ photoemission spectroscopy and Ar gas cluster ion beam sputtering integrated analysis system

Journal of Applied Physics ◽

10.1063/1.4897517 ◽

2014 ◽

Vol 116 (15) ◽

pp. 153702 ◽

Cited By ~ 10

Author(s):

Dong-Jin Yun ◽

JaeGwan Chung ◽

Yongsu Kim ◽

Sung-Hoon Park ◽

Seong-Heon Kim ◽

...

Keyword(s):

Ion Beam ◽

Integrated Analysis ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Cluster Ion ◽

Electrode Interface ◽

Analysis System ◽

Gas Cluster Ion Beam ◽

Ar Gas

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Study of Natural Oxidation of Ultra-Thin Aluminum Layers with In-Situ Resistance Measurement

MRS Proceedings ◽

10.1557/proc-569-185 ◽

1999 ◽

Vol 569 ◽

Cited By ~ 6

Author(s):

C. Fery ◽

W.E. Bailey ◽

K. Yamada ◽

S.X. Wang

Keyword(s):

Ion Beam ◽

Low Noise ◽

Resistance Measurement ◽

Ion Beam Sputtering ◽

Oxidation Rates ◽

Beam Sputtering ◽

Noise Data ◽

Set Up ◽

Lock In

ABSTRACTExposure to oxygen (1 Torr) at room temperature of thin Al films deposited by UHV ion beam sputtering has been studied using an in-situ resistance measurement set-up. Two lock-in amplifiers allow low noise data acquisition. By monitoring the conductance during deposition and oxidation we can deduce the consumed Al thickness as a function of exposure time (t). It is found that the Al/vacuum interface is diffuse for electron scattering. A two-stage mechanism for natural oxidation is revealed: fast growth (for t<10s) followed by a slow logarithmic growth. A simple model based on interface reactions and place exchange describes the experimental results. The conductance drop after 5 minutes of oxidation is found to decrease for initial Al thicknesses below 30A. This suggests the oxidation rates slow down for thin initial Al thicknesses.

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