Synthesis, Characterization And Optoelectrical Properties of Cd Doped ZnO Poly Crystalline Nano Thin Films Deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) Method

2011 ◽  
Author(s):  
Nitin Bindal ◽  
Manisha Sharma ◽  
H. Kumar ◽  
S. Sharma ◽  
S. C. Upadhaya ◽  
...  
Keyword(s):  
Thin Films ◽  
Silar Method ◽  
Layer Adsorption ◽  
Doped Zno ◽  
Ionic Layer

Preparation of Cu2ZnSnS4 Thin Films by Successive Ionic Layer Adsorption and Reaction (SILAR) Method for Supercapacitor Applications

2020 ◽  
Vol 20 (10) ◽  
pp. 6235-6244 ◽  
Author(s):  
A. Murugan ◽  
V. Siva ◽  
A. Shameem ◽  
S. Asath Bahadur
Keyword(s):  
Thin Films ◽  
Electrochemical Behavior ◽  
Electrochemical Impedance ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Layer Adsorption ◽  
Diffraction Patterns ◽  
Czts Thin Films ◽  
Supercapacitor Applications ◽  
Ionic Layer

The Cu2ZnSnS4 (CZTS) thin films have been prepared at different deposition cycles, deposited on a glass substrate by successive ionic layer adsorption and reaction (SILAR) method followed by the annealing process at elevated temperature. The investigations on the films have been carried out to understand and confirm its structure, functional group present, crystalline morphology, optical and electrochemical behavior. The powder X-ray diffraction patterns recorded indicate that the deposited films are formed in the tetragonal structure. Other parameters like grain size, dislocation density, and microstrain are also calculated. The uniform surface of the films with spherical shaped morphology has been observed by Scanning Electron Microscopy, and the elemental compositions have been confirmed by EDAX. Electrochemical behavior such as cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge–discharge analysis have been carried out by electrochemical workstation. The modified electrode exhibits maximum specific capacitance value as 416 F/g for a pure sample. Optical studies have shown that the band gaps are estimated between 1.40 eV and 1.57 eV.

Photoelectrochemical properties of Bi 2 S 3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method

2016 ◽  
Vol 686 ◽  
pp. 684-692 ◽  
Author(s):  
Ying Wang ◽  
Jiangyu Chen ◽  
Liangxing Jiang ◽  
Kaile Sun ◽  
Fangyang Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectrochemical Properties ◽  
Silar Method ◽  
Layer Adsorption ◽  
Ionic Layer

Characterization of Dy2S3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method

2021 ◽  
pp. 106693
Author(s):  
P.P. Bagwade ◽  
D.B. Malavekar ◽  
S.B. Ubale ◽  
T.T. Ghogare ◽  
R.N. Bulakhe ◽  
...  
Keyword(s):  
Thin Films ◽  
Silar Method ◽  
Layer Adsorption ◽  
Ionic Layer

scholarly journals Characterization of nanocrystalline cadmium telluride thin films grown by successive ionic layer adsorption and reaction (SILAR) method

2006 ◽  
Vol 29 (2) ◽  
pp. 165-168 ◽  
Author(s):  
A. U. Ubale ◽  
R. J. Dhokne ◽  
P. S. Chikhlikar ◽  
V. S. Sangawar ◽  
D. K. Kulkarni
Keyword(s):  
Thin Films ◽  
Cadmium Telluride ◽  
Silar Method ◽  
Layer Adsorption ◽  
Ionic Layer

CdS-PbS Multilayer Thin Films Grown by the SILAR Method

2004 ◽  
Vol 99-100 ◽  
pp. 243-246 ◽  
Author(s):  
S. Lindroos ◽  
J. Puišo ◽  
Sigitas Tamulevičius ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Double Layer ◽  
Crystalline Silicon ◽  
Normal Pressure ◽  
Multilayer Thin Films ◽  
Silar Method ◽  
Layer Structures ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

The successive ionic layer adsorption and reaction (SILAR) technique was used to grow double layer structures of CdS-PbS. The growth of thin films by the SILAR technique from diluted aqueous solutions was achieved, ionic layer by ionic layer, at room temperature and normal pressure. The thin films on silicon were characterized by XRD, AFM, XPS. It was established that a double layer could be grown on crystalline silicon and that the morphology and crystallinity of the films could be controlled by changing the lead precursor.

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