Interfacial reactions between nickel thin films and GaN

1997 ◽  
Vol 82 (2) ◽  
pp. 650-654 ◽  
Author(s):  
H. S. Venugopalan ◽  
S. E. Mohney ◽  
B. P. Luther ◽  
S. D. Wolter ◽  
J. M. Redwing
Keyword(s):  
Thin Films ◽  
Interfacial Reactions ◽  
Nickel Thin Films

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Interfacial reactions of electroless nickel thin films on silicon

2005 ◽  
Vol 243 (1-4) ◽  
pp. 259-264 ◽  
Author(s):  
C.M. Liu ◽  
W.L. Liu ◽  
S.H. Hsieh ◽  
T.K. Tsai ◽  
W.J. Chen
Keyword(s):  
Thin Films ◽  
Electroless Nickel ◽  
Interfacial Reactions ◽  
Nickel Thin Films

Analysis of electroless nickel thin films

1991 ◽  
Vol 49 ◽  
pp. 510-511 ◽  
Author(s):  
C. W. Price ◽  
E. F. Lindsey
Keyword(s):  
Thin Films ◽  
Inertial Confinement Fusion ◽  
Electroless Nickel ◽  
Inertial Confinement ◽  
Plating Bath ◽  
X Ray ◽  
Nickel Thin Films ◽  
Nickel Deposits ◽  
Confinement Fusion ◽  
Thickness Measurements

Thickness measurements of thin films are performed by both energy-dispersive x-ray spectroscopy (EDS) and x-ray fluorescence (XRF). XRF can measure thicker films than EDS, and XRF measurements also have somewhat greater precision than EDS measurements. However, small components with curved or irregular shapes that are used for various applications in the the Inertial Confinement Fusion program at LLNL present geometrical problems that are not conducive to XRF analyses but may have only a minimal effect on EDS analyses. This work describes the development of an EDS technique to measure the thickness of electroless nickel deposits on gold substrates. Although elaborate correction techniques have been developed for thin-film measurements by x-ray analysis, the thickness of electroless nickel films can be dependent on the plating bath used. Therefore, standard calibration curves were established by correlating EDS data with thickness measurements that were obtained by contact profilometry.

PULSED LASER IRRADIATION OF NICKEL THIN FILMS ON SILICON

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Nickel Thin Films ◽  
Pulsed Laser Irradiation

Atomic force microscopy of in situ deformed nickel thin films

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nickel Thin Films ◽  
Atomic Force

scholarly journals Effect of micro-notches on fatigue strength of electrodeposited nanocrystalline nickel thin films

2018 ◽  
Vol 165 ◽  
pp. 04011
Author(s):  
Keisuke Tanaka ◽  
Yuta Murase ◽  
Hirohisa Kimachi
Keyword(s):  
Thin Films ◽  
Fatigue Strength ◽  
Fatigue Limit ◽  
Stress Ratio ◽  
Fatigue Crack Initiation ◽  
Fatigue Tests ◽  
Fine Grained ◽  
Nickel Thin Films ◽  
Nano Crystalline ◽  
Fictitious Crack

The effect of micro-notches on the fatigue strength of nickel thin films was studied. Two types of thin films with 10 μm thickness were produced by electrodeposition using sulfamate solution without and with brightener: ultra-fine grained film (UFG) with the grain size of 384 nm and nano-crystalline grained film (NCG) with that of 17 nm. Micro-sized notches introduced by FIB had the width of 2 μm and various depths from 8 to 150μm. Fatigue tests were conducted under the stress ratio of 0.1. The fatigue strength decreased with increasing depth of notches. NCG had much higher strength than UFG compared at the same notch depth. Notches as small as 8μm did reduce the fatigue strength of both UFG and NCG. The fatigue limit was controlled by the initiation of cracks and no non-propagating crack was observed in specimens fatigued below the fatigue limit. A model of fictitious crack successfully predicted the reduction of the fatigue limit due to micro-notches. The characteristic crack length of NCG was much smaller than the UFG, while the fatigue strength of defect-free NCG was larger than that of UFG. SEM observation of fracture surfaces was conducted to reveal micromechanisms of fatigue crack initiation.

Synthesis of Nanocomposite thin film Ti/Al Multilayers and Ti-Aluminides

1996 ◽  
Vol 457 ◽  
Author(s):  
R. Banerjee ◽  
X. D. Zhang ◽  
S. A. Dregia ◽  
H. L. Fraser
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Thermodynamic Model ◽  
Interfacial Reactions ◽  
Experimental Results ◽  
Structural Transitions ◽  
Nanocomposite Thin Film ◽  
Multilayered Thin Films

ABSTRACTNanocomposite Ti/Al multilayered thin films have been deposited by magnetron sputtering. These multilayers exhibit interesting structural transitions on reducing the layer thickness of both Ti and Al. Ti transforms from its bulk stable hep structure to fee and Al transforms from fee to hep. The effect of ratio of Ti layer thickness to Al layer thickness on the structural transitions has been investigated for a constant bilayer periodicity of 10 nm by considering three different multilayers: 7.5 nm Ti / 2.5 nm Al, 5 nm Ti / 5 nm Al and 2.5 nm Ti / 7.5 nm Al. The experimental results have been qualitatively explained on the basis of a thermodynamic model. Preliminary experimental results of interfacial reactions in Ti/Al bilayers resulting in the formation of Ti-aluminides are also presented in the paper.

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