Monte Carlo simulation of an amorphous hydrogenated silicon film deposition from a gas jet activated by an electron beam

1998 ◽  
Vol 83 (7) ◽  
pp. 3926-3928 ◽  
Author(s):  
A. V. Vasenkov ◽  
R. G. Sharafutdinov ◽  
A. V. Skrinnikov
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Silicon Film ◽  
Film Deposition ◽  
Gas Jet ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

Estimation of Nanometer-Sized EB Patterning Using Energy Deposition Distribution in Monte Carlo Simulation

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Energy Distribution ◽  
Electron Energy ◽  
Electron Beam Lithography ◽  
Energy Deposition ◽  
Si Substrate ◽  
Positive Resist

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.

Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation

2009 ◽  
Vol 49 (9-11) ◽  
pp. 972-976 ◽  
Author(s):  
Mauro Ciappa ◽  
Luigi Mangiacapra ◽  
Maria Stangoni ◽  
Stephan Ott ◽  
Wolfgang Fichtner
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Depth Distribution ◽  
Electric Cables

Electrical and Optical Properties of Amorphous Si1-xSnx: H Structures

1986 ◽  
Vol 77 ◽  
Author(s):  
D. Girginoudi ◽  
A. Thanailakis ◽  
A. Christou
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Entire Range ◽  
Conductivity Measurements ◽  
Electrical And Optical Properties ◽  
Hydrogenated Silicon ◽  
Tin Films ◽  
Amorphous Hydrogenated Silicon ◽  
Conductivity Increase ◽  
Band Edge Luminescence

ABSTRACTAmorphous hydrogenated silicon-tin films (α — Six Snx:H) have been prepared by co-electron beam and Knudsen cell deposition. It is shown that the dependence of Eg on x, over the entire range of 0 < x < 0.51 studied, cannot be described by a single linear relationship. The d.c. conductivity measurements indicate two distinct conduction regions as a function of x. The addition of Sn up to x = 0.10 creates a high density of dangling bonds and moves the band edges so a significant conductivity increase is observed. The bonding between Si and H is preferred to Sn and H. Sn-H bonds were observed only for x > 0.40. Photoluminescence measurements show that band edge luminescence dominates at 1.3–1.4 eV.

SU-FF-T-438: Modeling 6 MeV Electron Beam From Medical Linear Accelerator Using Monte Carlo Simulation

2009 ◽  
Vol 36 (6Part15) ◽  
pp. 2623-2623
Author(s):  
P Dechsupa ◽  
C Tannanonta ◽  
N Phaisangittisakul
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Beam ◽  
Linear Accelerator ◽  
Medical Linear Accelerator
Sign in / Sign up

Export Citation Format

Share Document