Deep and shallow electronic states at ultrathin InAs insertions in GaAs investigated by capacitance spectroscopy

1998 ◽  
Vol 84 (11) ◽  
pp. 6135-6140 ◽  
Author(s):  
P. Krispin ◽  
J.-L. Lazzari ◽  
H. Kostial
1982 ◽  
Vol 35 (1) ◽  
pp. 53 ◽  
Author(s):  
SJ Pearton

Capacitance spectroscopy measurements of the energy levels and majority carrier capture cross sections of deep impurity states associated with S, Zn, Pb and Bi in Ge are presented. Similarities in the electrical properties of these elements with other deep impurities in Ge are discussed.


Author(s):  
E. G. Rightor

Core edge spectroscopy methods are versatile tools for investigating a wide variety of materials. They can be used to probe the electronic states of materials in bulk solids, on surfaces, or in the gas phase. This family of methods involves promoting an inner shell (core) electron to an excited state and recording either the primary excitation or secondary decay of the excited state. The techniques are complimentary and have different strengths and limitations for studying challenging aspects of materials. The need to identify components in polymers or polymer blends at high spatial resolution has driven development, application, and integration of results from several of these methods.


2002 ◽  
Vol 75 (4-5) ◽  
pp. 359-371
Author(s):  
M. Hidaka ◽  
N. Tokiwa ◽  
M. Yoshimura ◽  
H. Fujii ◽  
Jae-Young Choi ◽  
...  

1997 ◽  
Vol 94 ◽  
pp. 1794-1801 ◽  
Author(s):  
C Destandau ◽  
G Chambaud ◽  
P Rosmus
Keyword(s):  

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