Annealing dependence of diamond-metal Schottky barrier heights probed by hard x-ray photoelectron spectroscopy

We prepare a zinc oxide- (ZnO-) based Schottky diode constructed from the transparent cosputtered indium tin oxide- (ITO-) ZnO ohmic contact electrode and Ni/Au Schottky metal. After optimizing the ohmic contact property and removing the ion-bombardment damages using dilute HCl etching solution, the dilute hydrogen peroxide (H2O2) and ammonium sulfide (NH4)2Sxsolutions, respectively, are employed to modify the undoped ZnO layer surface. Both of the Schottky barrier heights with the ZnO layer surface treated by these two solutions, evaluated from the current-voltage (I-V) and capacitance-voltage (C-V) measurements, are remarkably enhanced as compared to the untreated ZnO-based Schottky diode. Through the X-ray photoelectron spectroscopy (XPS) and room-temperature photoluminescence (RTPL) investigations, the compensation effect as evidence of the increases in the O–H and OZnacceptor defects appearing on the ZnO layer surface after treating by the dilute H2O2solution is responsible for the improvement of the ZnO-based Schottky diode. By contrast, the enhancement on the Schottky barrier height for the ZnO layer surface treated by using dilute (NH4)2Sxsolution is attributed to both the passivation and compensation effects originating from the formation of the Zn–S chemical bond andVZnacceptors.

Download Full-text

X-ray photoelectron spectroscopy investigation of the Schottky barrier at low-k a-SiO(C):H/Cu interfaces

Applied Physics Letters ◽

10.1063/1.3660248 ◽

2011 ◽

Vol 99 (20) ◽

pp. 202903 ◽

Cited By ~ 31

Author(s):

S. W. King ◽

M. French ◽

M. Jaehnig ◽

M. Kuhn ◽

B. French

Keyword(s):

Schottky Barrier ◽

Photoelectron Spectroscopy ◽

X Ray ◽

Low K

Download Full-text

Characterizations Of Zr/Si1-x-yGexCy After Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-533-49 ◽

1998 ◽

Vol 533 ◽

Cited By ~ 3

Author(s):

V. Aubry-Fortuna ◽

M. Barthula ◽

F. Meyer ◽

A. Eyal ◽

C. Cytermann ◽

...

Keyword(s):

Thermal Stability ◽

Schottky Barrier ◽

Rapid Thermal Annealing ◽

Residual Strain ◽

Strain Relaxation ◽

Small Strain ◽

X Ray Diffraction ◽

X Ray ◽

Barrier Heights ◽

Final Compound

AbstractIn this work, we have investigated the reaction between Zr and SiGeC alloys after Rapid Thermal anneals performed at 800°C for 5 min. The interactions of the metal with the alloy have been investigated by X-Ray diffraction. Four crystal X-Ray diffraction was also performed to measure the residual strain in the epilayer. The final compound of the reaction is the C49- Zr(Si1-xGex)2 phase. The C49 film contains the same Ge concentration as in the as-deposited Si1-x-yGexCy layer. This suggests that no Ge-segregation occurs during annealing. Only a small strain relaxation is detected in the unreacted SiGe epilayer during the reaction. The addition of C in the epilayer prevents any strain relaxation. These results are in contrast with those observed in systems with Ti and Co, and show that the system Zr-Si-Ge is much more stable. Schottky barrier heights have been also measured: annealing leads to a slight decrease of the barrier without any degradation of the contact. The resistivity of the C49 film is about 80 μΩcm. These results indicate that Zr may be a good candidate for contacts on IV-IV alloys in term of thermal stability.

Download Full-text