Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

2013 ◽  
Vol 102 (9) ◽  
pp. 093503 ◽  
Author(s):  
A. Fontserè ◽  
A. Pérez-Tomás ◽  
M. Placidi ◽  
N. Baron ◽  
S. Chenot ◽  
...  
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