Zincblende-wurtzite phase transformation of ZnSe films by pulsed laser deposition with nitrogen doping

AbstractPulsed laser deposition has been explored to synthesize gallium nitride films on c-plane sapphire by ablating a pressed GaN target in vacuum. The films were characterized by X-ray diffraction, and high resolution transmission electron microscopy to study the nature of epitaxy, growth, and defect content. Single crystal films with narrow o0-rocking curve width were deposited in the substrate temperature range 700-780°C. High resolution microscopy revealed uniform film surface at lower substrate temperature for films as thin as 150 nm. The predominant extended defects were found to be threading edge dislocations (Burgers vector 1/3<1120>) with the density ~1010 cm-2. The thickness of all these films were in the range 100-150 nm. The coexistence of zincblende phase of GaN alongwith wurtzite phase was found in the film deposited at 780°C. The stabilization of metastable zincblende phase at higher temperature point towards the noneqilibrium nature of laser ablation. These preliminary results indicate the potential of PLD to synthesize high quality GaN films free of hydrogen.

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Ion implantation induced phase transformation and enhanced crystallinity of as deposited copper oxide thin films by pulsed laser deposition

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.03.064 ◽

2015 ◽

Vol 84 ◽

pp. 24-35 ◽

Cited By ~ 10

Author(s):

Umesh Chandra Bind ◽

Raj Kumar Dutta ◽

Gurpreet Kaur Sekhon ◽

Kanhaiya Lal Yadav ◽

J.B.M. Krishna ◽

...

Keyword(s):

Thin Films ◽

Phase Transformation ◽

Ion Implantation ◽

Copper Oxide ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Oxide Thin Films ◽

Enhanced Crystallinity

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Nitrogen doping of ZnO thin films grown by plasma-assisted pulsed-laser deposition

Journal of Physics Conference Series ◽

10.1088/1742-6596/59/1/109 ◽

2007 ◽

Vol 59 ◽

pp. 505-509 ◽

Cited By ~ 4

Author(s):

M Novotny ◽

J-R Duclère ◽

E McGlynn ◽

M O Henry ◽

R O'Haire ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Nitrogen Doping ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films

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Structural and Optical Properties of ZnS:Mn Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-667-g5.2 ◽

2001 ◽

Vol 667 ◽

Cited By ~ 1

Author(s):

K. M. Yeung ◽

S. G. Lu ◽

C. L. Mak ◽

K. H. Wong

Keyword(s):

Optical Properties ◽

Substrate Temperature ◽

Pulsed Laser Deposition ◽

Energy Gap ◽

Pulsed Laser ◽

Laser Deposition ◽

Yellow Emission ◽

Wurtzite Phase ◽

Zinc Blende ◽

Zinc Blende Structure

ABSTRACTHigh-quality manganese-doped zinc sulfide (ZnS:Mn) thin films have been deposited on various substrates using pulsed laser deposition (PLD). Effects of back-filled Ar pressure and substrate temperature on the structural as well as optical properties of ZnS:Mn films were studied. Structural properties of these films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Photoluminescence (PL) and optical transmittance were used to characterize the optical properties of these films. Our results reveal that ZnS:Mn films were polycrystalline with a mixed phase structure consisting of both wurtzite and zinc-blende structure. The ratio of these two structures was strongly depended on the change of substrate temperature. Low substrate temperature facilitated the formation of zinc-blende structure while the wurtzite phase became dominant at high substrate temperature. ZnS:Mn films with preferred wurtzite structure were obtained at a substrate temperature as low as 450°C. An orange-yellow emission band was observed at ∼590 nm. As the substrate temperature increased, the peak of this PL band shifted to a shorter wavelength. Furthermore, shifts in the absorption edge and the energy gap due to the change in substrate temperature were also observed. The variation in these optical properties will be correlated to their structural change.

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Growth of p-type ZnTe thin films by using nitrogen doping during pulsed laser deposition

Journal of the Korean Physical Society ◽

10.3938/jkps.67.672 ◽

2015 ◽

Vol 67 (4) ◽

pp. 672-675 ◽

Cited By ~ 5

Author(s):

Kyoung Su Lee ◽

Gyujin Oh ◽

Eun Kyu Kim

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Nitrogen Doping ◽

Pulsed Laser ◽

Laser Deposition ◽

P Type ◽

Znte Thin Films

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The suppression of structural phase transformation in LaVO3 and La1−xSrxVO3 thin films fabricated by pulsed laser deposition

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2005.06.005 ◽

2005 ◽

Vol 66 (10) ◽

pp. 1647-1654 ◽

Cited By ~ 9

Author(s):

I. Chaitanya Lekshmi ◽

Arup Gayen ◽

M.S. Hegde

Keyword(s):

Thin Films ◽

Phase Transformation ◽

Pulsed Laser Deposition ◽

Structural Phase ◽

Pulsed Laser ◽

Laser Deposition ◽

Structural Phase Transformation

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Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100148022 ◽

1993 ◽

Vol 51 ◽

pp. 438-439

Author(s):

Michael P. Mallamaci ◽

James Bentley ◽

C. Barry Carter

Keyword(s):

Liquid Phase ◽

Single Crystal ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ceramic Materials ◽

Laser Deposition ◽

Triple Junctions ◽

Ion Milling ◽

Multicomponent Oxides ◽

Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

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