Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4891258 ◽

2014 ◽

Vol 116 (4) ◽

pp. 044507 ◽

Author(s):

Chongbiao Luan ◽

Zhaojun Lin ◽

Yuanjie Lv ◽

Jingtao Zhao ◽

Yutang Wang ◽

...

Keyword(s):

Theoretical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽

10.1063/5.0012615 ◽

2020 ◽

Vol 10 (7) ◽

pp. 075212

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Electron Systems ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In 0.18 Al 0.82 N/AlN/GaN heterostructure field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/23/4/047201 ◽

2014 ◽

Vol 23 (4) ◽

pp. 047201

Author(s):

Ying-Xia Yu ◽

Zhao-Jun Lin ◽

Chong-Biao Luan ◽

Yuan-Jie Lü ◽

Zhi-Hong Feng ◽

...

Keyword(s):

Electric Field ◽

Field Distribution ◽

Field Effect ◽

Electric Field Distribution ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2020.114576 ◽

2021 ◽

Vol 127 ◽

pp. 114576

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu

Keyword(s):

Barrier Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Algan Barrier ◽

Heterostructure Field Effect Transistors ◽

Algan Barrier Layer ◽

Gan Heterostructure

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Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2014.04.027 ◽

2014 ◽

Vol 62 ◽

pp. 76-79 ◽

Author(s):

Chongbiao Luan ◽

Zhaojun Lin ◽

Yuanjie Lv ◽

Zhihong Feng ◽

Jingtao Zhao ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Subthreshold Swing ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4752254 ◽

2012 ◽

Vol 112 (5) ◽

pp. 054513 ◽

Author(s):

Chongbiao Luan ◽

Zhaojun Lin ◽

Zhihong Feng ◽

Lingguo Meng ◽

Yuanjie Lv ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors

Scientific Reports ◽

10.1038/s41598-018-27357-6 ◽

2018 ◽

Vol 8 (1) ◽

Author(s):

Peng Cui ◽

Jianghui Mo ◽

Chen Fu ◽

Yuanjie Lv ◽

Huan Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Scattering Potential ◽

Gan Heterostructure

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Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.4820960 ◽

2013 ◽

Vol 103 (11) ◽

pp. 113502 ◽

Author(s):

Yuanjie Lv ◽

Zhihong Feng ◽

Tingting Han ◽

Shaobo Dun ◽

Guodong Gu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Induced Polarization ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Superlattices and Microstructures ◽

10.1016/j.spmi.2018.05.016 ◽

2018 ◽

Vol 120 ◽

pp. 389-394 ◽

Author(s):

Yan Liu ◽

Zhaojun Lin ◽

Peng Cui ◽

Chen Fu ◽

Yuanjie Lv ◽

...

Keyword(s):

High Temperature ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Temperature Electron ◽

Gan Heterostructure

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Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors

Scientific Reports ◽

10.1038/s41598-018-19510-y ◽

2018 ◽

Vol 8 (1) ◽

Author(s):

Peng Cui ◽

Yuanjie Lv ◽

Huan Liu ◽

Aijie Cheng ◽

Chen Fu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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