Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

2014 ◽  
Vol 116 (4) ◽  
pp. 044507 ◽  
Author(s):  
Chongbiao Luan ◽  
Zhaojun Lin ◽  
Yuanjie Lv ◽  
Jingtao Zhao ◽  
Yutang Wang ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Coulomb Field ◽  
Polarization Coulomb Field Scattering ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

scholarly journals Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP Advances ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 075212
Author(s):  
Guangyuan Jiang ◽  
Yuanjie Lv ◽  
Zhaojun Lin ◽  
Yongxiong Yang ◽  
Yang Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Coulomb Field ◽  
Electron Systems ◽  
Polarization Coulomb Field Scattering ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

2012 ◽  
Vol 112 (5) ◽  
pp. 054513 ◽  
Author(s):  
Chongbiao Luan ◽  
Zhaojun Lin ◽  
Zhihong Feng ◽  
Lingguo Meng ◽  
Yuanjie Lv ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Coulomb Field ◽  
Polarization Coulomb Field Scattering ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
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