Cryogenic Joule annealing induced large magnetic field response of Co-based microwires for giant magneto-impedance sensor applications

2014 ◽  
Vol 116 (5) ◽  
pp. 053907 ◽  
Author(s):  
D. M. Chen ◽  
D. W. Xing ◽  
F. X. Qin ◽  
J. S. Liu ◽  
H. X. Shen ◽  
...  
Sensors ◽  
2021 ◽  
Vol 21 (13) ◽  
pp. 4456
Author(s):  
Sungjae Ha ◽  
Dongwoo Lee ◽  
Hoijun Kim ◽  
Soonchul Kwon ◽  
EungJo Kim ◽  
...  

The efficiency of the metal detection method using deep learning with data obtained from multiple magnetic impedance (MI) sensors was investigated. The MI sensor is a passive sensor that detects metal objects and magnetic field changes. However, when detecting a metal object, the amount of change in the magnetic field caused by the metal is small and unstable with noise. Consequently, there is a limit to the detectable distance. To effectively detect and analyze this distance, a method using deep learning was applied. The detection performances of a convolutional neural network (CNN) and a recurrent neural network (RNN) were compared from the data extracted from a self-impedance sensor. The RNN model showed better performance than the CNN model. However, in the shallow stage, the CNN model was superior compared to the RNN model. The performance of a deep-learning-based (DLB) metal detection network using multiple MI sensors was compared and analyzed. The network was detected using long short-term memory and CNN. The performance was compared according to the number of layers and the size of the metal sheet. The results are expected to contribute to sensor-based DLB detection technology.


1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.


2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.


2021 ◽  
Vol 118 (14) ◽  
pp. 142404
Author(s):  
Tomoya Kanematsu ◽  
Yoshihiko Okamoto ◽  
Koshi Takenaka

1973 ◽  
Vol 51 (4) ◽  
pp. 491-492 ◽  
Author(s):  
A. N. Chakravarti ◽  
D. P. Parui

The diffusivity–mobility ratio in degenerate semiconductors in the presence of a large magnetic field is found to increase with increasing temperature at a rate which is dependent on temperature at relatively low temperatures. It is also found that, at any given temperature, the ratio is increased by the application of the field.


2000 ◽  
Vol 178 (1) ◽  
pp. 33-38 ◽  
Author(s):  
F. Pulizzi ◽  
P.C.M. Christianen ◽  
J.C. Maan ◽  
T. Wojtowicz ◽  
G. Karczewski ◽  
...  

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